Manufacturing Method of Semiconductor Device and Substrate Processing Apparatus

ABSTRACT

A substrate processing apparatus includes a processing chamber that forms a thin film on a main surface of a plurality of substrates and a heater provided outside of the processing chamber, for heating an inside of the processing chamber. The substrate processing apparatus also includes a first gas supply part configured to supply a first processing gas, a second gas supply part configured to supply the first processing gas to a middle part of a gas flow, a third gas supply part configured to supply a second processing gas, an exhaust part and a controller that causes the first processing gas and the second processing gas to react with each other in the processing chamber to form an amorphous material, and form a thin film of the plurality of substrates.

BACKGROUND

This is a Division of application Ser. No. 12/223,718 filed Aug. 7,2008. The disclosure of the prior application is hereby incorporated byreference herein in its entirety.

1. Technical Field

The present invention relates to a manufacturing method of asemiconductor device and a substrate processing apparatus for processinga plurality of substrates by using a processing gas of different gasspecies.

2. Background Art

A thermal chemical vapor deposition method (thermal CVD method) is givenas an example of a manufacturing method of a semiconductor device. Bythis thermal CVD method, two kinds or more of processing gases ofdifferent gas species are used to form a thin film on a substrate suchas a wafer. Particularly, when a plurality of substrates arecollectively processed, the processing gases of different species aresupplied into a processing chamber heated to a film forming temperature,and thin films are simultaneously formed on the plurality of substrates.When a nitride silicon film is formed as the thin film, the processinggas containing silicon (Si) and the processing gas containing nitrogen(N) are thermally decomposed to precipitate nitride silicon on thesubstrate (for example, see patent document 1).

FIG. 4 is a schematic block diagram showing an example of a processingfurnace of a substrate processing apparatus for simultaneously formingthe thin film on the plurality of substrates. This substrate processingapparatus is constituted of, for example, a vertical pressure reducingCVD device. This processing furnace 5 includes a heater 3 and a reactiontube 4. A boat 8, on which a plurality of wafers 9 are stacked, isloaded into a processing chamber 2 formed in the reaction tube 4. A gassupply system 1 for supplying the processing gas of different gasspecies or inert gas into the processing chamber and an exhaust system 7having a pump 6 for exhausting an inside of the processing chamber 2 areprovided in a processing furnace 5.

It is general to use one system nozzle in which every one nozzle isprovided for each processing gas. In this one system nozzle, every onenozzle for deposition processing is provided for each processing gas.The one system nozzle is provided on an upper stream side (lower part ofthe processing chamber 2) of a gas flow outside of a region in which aplurality of wafers 9 exist. Accordingly, each processing gas issupplied from each one place in the lower part of the processing chamber2, toward the plurality of wafers 9 stacked on the boat 8.

-   Patent document 1: Japanese Patent Laid Open No. 2004-95940

Here, when there is a small number of substrates to be processed, orwhen the substrate to be processed is a small diameter substrate, thethin film having an excellent deposition characteristics can be formedon the substrate by using the aforementioned substrate processingapparatus. This because, a surface area of the substrate on which thethin film is formed is small, and therefore a flow rate of theprocessing gas required for deposition, namely, the flow rate of theprocessing gas required for covering a substrate surface area can becovered by using the aforementioned processing furnace even under areduced pressure.

However, when there is a large number of substrates to be processed, orwhen the substrate to be processed is a large diameter substrate havinga high pattern density, the surface area in which the thin film isformed is increased. In this case, in the aforementioned substrateprocessing apparatus, the processing gas of a specific amount or more offlow rate needs to be supplied into the processing chamber from oneplace. However, there is an exhaust resistance in the processingchamber, and therefore when the processing gas of a specific amount ormore flow rate is supplied from one place, the pressure in theprocessing chamber is increased, thus making it difficult to reduce thepressure of the processing chamber to deposit a film.

Therefore, when the film is deposited by reducing the pressure in theprocessing chamber, the flow rate of the processing gas needs to berestricted to a specific amount or less of flow rate. However, theprocessing gas is gradually consumed for depositing the film, toward astacking direction in which a plurality of substrates are stacked (froman upper stream side to a lower stream side). Therefore, when the flowrate of the processing gas is restricted to a specific amount or less,an amount of the processing gas supplied to the substrate that exists onthe lower stream side of the gas flow out of the plurality of substratesbecomes gradually insufficient. Accordingly, when the thin film formedfrom an amorphous material obtained by chemical reaction by using twokinds or more of different gas species, particularly, the depositioncharacteristics such as a practical film thickness uniformity can hardlymaintained. Note that in order to suppress an increase of the surfacearea of the substrate on which the thin film is formed, it can beconsidered that the number of wafers is made small. However, in thiscase, the number of wafers that can be collectively processed is alsoreduced, thus deteriorating productivity of the substrate processingapparatus itself. Namely, when the plurality of substrates are processedby using the processing gas of different gas species, the followingphenomenon occurs. Namely, the productivity is lowered when thedeposition characteristics is prioritized, and when the productivity isprioritized, the deposition characteristics are deteriorated.Particularly, when the thin film of a large diameter having a highpattern density is deposited, this tendency becomes remarkable.

An object of the present invention is to provide the manufacturingmethod and the substrate processing apparatus capable of realizing ahigh productivity, while maintaining excellent depositioncharacteristics in a case of using the processing gas of different gasspecies.

SUMMARY OF THE INVENTION

According to one aspect of the present invention, there is provided amanufacturing method of a semiconductor device, including the steps of:

loading a plurality of substrates into a processing chamber;

supplying a first processing gas containing at least one element out ofa plurality of elements constituting a thin film formed on a mainsurface of the substrate and capable of depositing a film by itselfsingularly, to an upper stream side of a gas flow outside of a region inwhich the plurality of substrates loaded into the processing chamber arearranged, and supplying a second processing gas containing at leastother element out of the plurality of elements and not capable ofdepositing the film by itself singularly, to the upper stream side ofthe gas flow outside of the region in which the plurality of substratesloaded into the processing chamber are arranged, and supplying the firstprocessing gas to a middle portion of the gas flow in the region wherethe plurality of substrates loaded into the processing chamber arearranged, and forming an amorphous material by causing reaction betweenthe first processing gas and the second processing gas in the processingchamber, and forming the thin film on the main surfaces of the pluralityof substrates; and

unloading the substrate already formed with the thin film form theprocessing chamber.

According to the present invention, high productivity can be realizedwhile maintaining excellent film deposition characteristics in a case ofusing the processing gas of different gas species.

DESCRIPTION OF PREFERRED EMBODIMENTS OF THE INVENTION

Preferred embodiments of the present invention will be explainedhereunder, based on the drawings.

As described above, in a conventional substrate processing apparatussuch as a vertical type pressure reducing CVD device, when eachprocessing gas of different gas species is supplied only from one place,it is difficult to uniformly supply each processing gas to an entirebody of a wafer arrangement area, and accordingly it is difficult tomake the thickness of a film uniform between plural wafers and in asurface of the wafer (here, the wafer arrangement area refers to an areawhere a plurality of wafers are arranged). Therefore, in thisembodiment, the vertical type pressure reducing CVD device is set as amulti-system nozzle type CVD device. This multi system nozzle type CVDdevice is a device in which a plurality of nozzles for film depositionprocessing are provided for one or a plurality of processing gases, soas to be positioned at different positions.

(1) First Embodiment

In the multi system nozzle type CVD device of this embodiment, not onlythe nozzle for supplying one gas species is set as the multi systemnozzle, but also the nozzle for supplying other gas species is set asthe multi system nozzle.

(1-1) Structure

FIG. 1 is a detailed view of a gas supply system connected to aprocessing furnace 202 constituting a part of a substrate processingapparatus according to a first embodiment of the present invention. FIG.3 is a view showing a structure of a first embodiment of the presentinvention, and is a schematic block diagram of the processing furnace202 of the substrate processing apparatus. Note that both processingfurnaces 202 of FIG. 1 and FIG. 3 are shown as a vertical sectionalview.

(1) Constitutional Elements of a Device and a Function of EachConstitutional Element

The device shown in FIG. 3 has the processing furnace 202, a gas supplysystem 232, and an exhaust system 232. Here, the processing furnace 202is a system for forming a prescribed thin film on a surface of a wafer200, being a semiconductor device, by using a processing gas in anair-tightly closed processing chamber 201. Also, the gas supply system232 is a system for supplying the processing gas, a cleaning gas, and aninert gas, etc, into the processing chamber 201 of this processingfurnace 202. Further, the exhaust system 231 is a system for exhaustingan atmosphere in the processing chamber 201.

(2) The Constitutional Element of the Processing Furnace 202 and theFunction of Each Constitutional Element

As shown in FIG. 3, the processing furnace 202 has a heater 206 as aheating mechanism. The heater 206 has a cylindrical shape, and isvertically installed by being supported by a heater base 251 as aholding board.

A process tube 203 as a reaction tube is arranged concentrically withthe heater 206. The process tube 203 has an inner tube 204 and an outertube 205 as an external reaction tube provided outside of the inner tube204. The inner tube 204 is composed of a heat resistant material such asquartz (SiO₂) or silicon carbide (SiC), and is formed in a cylindricalshape, with an upper end and a lower end opened. The processing chamber201 is formed in a cylindrical hollow part of the inner tube 204. In theprocessing chamber 201, a boat 217 as a substrate holding tool as willbe described later is constituted so as to house wafers. The boat 217 isconstituted so as to house wafers 200, being substrates, in a state ofbeing arranged in multiple stages in a vertical direction in ahorizontal posture. The outer tube 205 is made of a heat resistantmaterial such as quartz or silicon carbide, with an inner diameter madelarger than an outer diameter of the inner tube 204, in a cylindricalshape with the upper end closed and the lower end opened, and isprovided concentrically with the inner tube 204.

A manifold 209 is disposed in a lower part of the outer tube 205concentrically with the outer tube 205. The manifold 209 is made of, forexample, a metal member such as stainless, and is formed in acylindrical shape with the upper end and the lower end opened. Themanifold 209 is engaged with the inner tube 204 and the outer tube 205,respectively, so as to support them respectively. In addition, an O-ring220 a is provided between the manifold 209 and the outer tube 205, as asealing member. By supporting the manifold 209 by the heater base 251,the process tube 203 is set in a state of being installed vertically. Areaction vessel is formed by the process tube 203 and the manifold 209.

The gas supply system 232 for supplying the processing gas into theprocessing chamber 201 is connected to a side wall of the manifold 209so as to communicate with an inside of the processing chamber 201. Anozzle 230, being a gas introduction part, is connected to the gassupply system 232. A processing gas supply source and an inert gassupply source not shown are connected to the upper stream side of thegas supply system 232, namely, to the opposite side to a connection sidewith the nozzle 230 of the gas supply system 232, via a mass flowcontroller (MFC) 241, being a gas flow controller. A gas flow controller235 is electrically connected to the MFC 241. The MFC 241 is constitutedso as to control a gas flow rate at a desired timing, so that the gasflow rate supplied into the processing chamber 201 reaches a desiredamount. Note that a detailed structure of the gas supply system 232 willbe described later.

In addition, the exhaust system 231 for exhausting the atmosphere in theprocessing chamber 201 is provided on a side wall of the manifold 209.The exhaust system 231 is arranged in a lower end part of a cylindricalspace 250 formed by a gap between the inner tube 204 and the outer tube205, and is communicated with the inside of the cylindrical space 250. Avacuum exhaust device 246 such as a vacuum pump is connected to thelower stream side of the exhaust system 231, namely to the opposite sideto the connection side with the manifold 209 of the exhaust system 231,via a pressure sensor 245 and a main valve 242 as a pressure detector.The main valve 242 has a function of blocking a space between theprocessing chamber 201 and the vacuum exhaust device 246, and also iscapable of freely changing an opening degree so that the pressure in theprocessing chamber 201 reaches a prescribed pressure (vacuum degree). Apressure controller 236 is electrically connected to the main valve 242and the pressure sensor 245. The pressure controller 236 is constitutedto feedback-control the opening degree of the main valve 242, based onthe pressure in the processing chamber 201 and in the exhaust system 231detected by the pressure sensor 245, so that the pressure in theprocessing chamber 201 reaches a desired pressure at a desired timing.Note that an excessive pressurization preventing line 233 is connectedto the upper stream side of the main valve 242 of the exhaust system231, for performing excessive pressurization preventing processing. Anexcessive pressurization preventing valve 234 is inserted into theexcessive pressurization preventing line 233. When the pressure in theprocessing chamber 201 becomes excessive pressurization and such anexcessive pressurization is detected by the pressure sensor 245, theexcessive pressurization preventing valve 234 is opened by the pressurecontroller 236, and an excessive pressurization state in the processingchamber 201 is opened.

A seal cap 219, being a throat lid member, is provided in a lower partof the manifold 209, so as to air-tightly close a lower end opening ofthe manifold 209. The seal cap 219 is abutted on the lower end of themanifold 209 from a vertically lower side. The seal cap 219 is, forexample, made of metal such as stainless, and is formed in a disc shape.An O-ring 220 b, being a sealing member that abuts on the lower end ofthe manifold 209 is provided on an upper surface of the seal cap 219. Arotation mechanism 254 for rotating the boat 217 is installed on theopposite side of the processing chamber 201 of the seal cap 219. Arotary shaft 255 of the rotation mechanism 254 is penetrated through theseal cap 219 and is connected to the boat 217 as will be describedlater. By rotating the boat 217 by means of the rotation mechanism 254,the wafer 200 is rotated. The seal cap 219 is vertically elevated by aboat elevator 115, being an elevation mechanism installed vertically inan outside part of the process tube 203. Thus, the boat 217 can beloaded and unloaded in/from the processing chamber 201. A drivecontroller 237 is electrically connected to the rotation mechanism 254and the boat elevator 115. The drive controller 237 controls therotation mechanism 254 and the boat elevator 115, so that the rotationmechanism 254 and the boat elevator 115 perform a desired operation at adesired timing.

The boat 217 is made of a heat resistant material such as quartz (SiO₂)or silicon carbide (SiC), so that a plurality of wafers 200 are heldtherein in multiple stages in a horizontal posture, with centers thereofmutually aligned. In addition, a plurality of heat insulating boards216, being heat insulating members, having a disc shape made of the heatresistant material such as quartz and silicon carbide, are arranged inmultiple stages in the horizontal posture. By the heat insulating boards216, heat from the heater 206 is hardly transmitted to the manifold 209side.

In this embodiment, a wafer arrangement region R is composed of threeregions. They are, for example, a side dummy wafer arrangement regionR₂, a product wafer/monitor wafer arrangement region R₁, and a sidedummy wafer arrangement region R₀, from the top (lower stream side of agas flow) as shown in FIG. 1.

A temperature sensor 263, being a temperature detector, is installed inthe process tube 204. A temperature controller 238 is electricallyconnected to the heater 206 and the temperature sensor 263. Based ontemperature information detected by the temperature sensor 263, thetemperature controller 238 controls a power supply condition to theheater 206, so that the temperature in the processing chamber 201 has adesired temperature distribution at a desired timing. Specifically, thetemperature controller 238 controls the heater 206, so that a mainsurface temperature of a plurality of wafers 200 loaded into theprocessing chamber 201 is increased to a temperature at which theprocessing gas is thermally decomposed. Also, the temperature controller238 controls the heater 206, so that the main surface temperature of theplurality of wafers 200 is made substantially uniform over an entirebody of a region where the plurality of wafers 200 are arranged. Here,although a substantially uniform temperature has preferably atemperature gradient set at completely 0, there is also a case such as aslight temperature gradient, for example, the temperature gradient ofabout 0 to ±10° C.

The gas flow controller 235, the pressure controller 236, the drivecontroller 237, and the temperature controller 238 also constitute anoperation part and an input/output part, and is electrically connectedto a main controller 239 that controls an entire body of the substrateprocessing apparatus. These gas flow controller 235, pressure controller236, drive controller 237, temperature controller 238, and maincontroller 239 are constituted as a controller 240.

(3) Constituent Elements of the Gas Supply System 232 and the Functionof Each Constituent Element

As shown in FIG. 1, the gas supply system 232 has nozzles 41 to 44 asfirst gas supply nozzles, a nozzle 45, nozzles 46 to 49 as second gassupply nozzles, nozzles 50 to 51, piping parts 61 to 109, air valves 121to 160, MFCs 171 to 184, and a controller 240.

Here, the nozzles 41 to 44 and the nozzle 45 are shared in filmdeposition processing, after purging processing, cleaning processing,and atmospheric pressure returning processing. Also, nozzles 46 to 49and a nozzle 50 are nozzles shared in after purge processing and theatmospheric pressure returning processing. Further, a nozzle 51 is anozzle shared in cleaning gas processing and the atmospheric pressurereturning processing. These nozzles 41 to 51 are constituted of quartz,for example. Here, the after purge processing is the processing forcleaning the nozzles 41 to 51 and the processing chamber 201 by inertgas, after the film deposition processing is finished. The cleaningprocessing is the processing for cleaning a reaction product depositedon the process tube 203 and the nozzles 41 to 50. The atmosphericpressure returning processing is the processing for making the pressurein the processing chamber 201 return to the atmospheric pressure afterthe after purge processing is finished.

The piping parts 61 to 109 are the piping for supplying each kind ofgases to the nozzles 41 to 51. The air valves 121 to 160 are valves foropening/closing each of the piping parts 61 to 109. The MFCs 171 to 184are controller that controls each flow rate per unit time, flowingthrough piping parts 62 to 66, 68 to 69, 76 to 80, 82, 88 of the gassupplied into piping parts 62 to 66, 68 to 69, 76 to 80, 82, 88. Thecontroller 240 controls open/close of the air valves 121 to 160 via thegas flow controller 235 and each operation of the MFCs 171 to 184.

In addition, the air valves 121 to 125, and the air valves 132 to 136have the function of selectively supplying to piping parts 89 to 93 theprocessing gas flowing through the piping parts 62 to 66 or the inertgas flowing through the piping parts 70 to 74. Further, the air valves151 to 155 and the air valves 156 to 160 have the function ofselectively supplying into the piping parts 105 to 109 the cleaning gasflowing through the piping parts 83 to 87 or gas (the processing gas orthe inert gas) flowing through the piping parts 89 to 93.

In addition, the air valves 142 to 146 and the air valves 127 to 131have the function of selectively supplying into piping parts 94 to 98the processing gas flowing through the piping parts 76 to 80 or theinert gas flowing through the piping parts 99 to 103.

(4) Arrangement Structure of the Nozzles 41 to 51

The aforementioned nozzles 41 to 44, being first gas supply nozzles, areconstituted as L-like tubular shapes, and are raised in a verticaldirection (an arrangement direction of the substrates) along an innerwall of the processing chamber 201. Base end portions of the nozzles 41to 44 are positioned to the outside of the side wall of the manifold 209via a nozzle through hole formed on the side wall of the manifold 209.In addition, tip end portions of the nozzles 41 to 44 are positioned tomiddle parts of the gas flow in a region where a plurality of wafers 200loaded into the processing chamber 201 are arranged. Specifically, thetip end portion of each nozzles 41 to 44 is respectively positioned toplural middle parts of mutual different positions (heights) providedalong the gas flow. For example, each tip end portion of the nozzles 41to 44 is respectively positioned to 76-th, approximately 51^(st),approximately 26-th, and approximately first, counted from approximatelythe lower part of 100-th wafer, for example, (an upper stream side ofthe gas flow) that exits in a product wafer/monitor wafer arrangementregion R₁.

In addition, similarly to the nozzles 41 to 44, the aforementionednozzles 46 to 49, being second gas supply nozzles, are also constitutedas the L-like tubular shapes, and are raised (extended) in the verticaldirection (arrangement direction of the substrates) along the inner wallof the processing chamber 201. The base end portions of the nozzles 46to 49 are positioned to the outside of the side wall of the manifold209, via the nozzle through hole formed on the side wall of the manifold209. In addition, the tip end portions of the nozzles 46 to 49 arepositioned in the middle parts of the gas flow in the region where theplurality of wafers 200 are arranged, substantially at the same position(height) as that of the tip end portions of the nozzles 41 to 44. Forexample, similarly to each tip end portion of the nozzles 41 to 44, eachtip end portion of the nozzles 46 to 49 is positioned to approximately76-th, approximately 51^(st) approximately 26-th, and approximatelyfirst of 100 wafers, for example, that exist in the product/monitorwafer arrangement region R₁.

In addition, the aforementioned nozzles 45 and 50 are constituted asstraight tubular shapes, and are provided in a horizontal direction inthe processing chamber 201, and are not raised (extended) in thevertical direction. The base end portions of the nozzles 45 and 50 arepositioned to the outside of the side wall of the manifold 209, via thenozzle through hole formed on the side wall of the manifold 209.Further, the tip end portions of the nozzles 45 and 50 are positioned onthe upper stream side of the gas flow outside of the wafer arrangementregion R. Namely, the tip end portions of the nozzles 45 and 50 arepositioned in a lower part outside of the wafer arrangement region R.Note that the shapes of the nozzles 45 and 50 are not limited to theaforementioned shape, but may be constituted as the L-like tubular shapeand may be raised (extended) in the vertical direction.

In addition, the aforementioned nozzle 51 is constituted as the L-liketubular shape, and is raised in the vertical direction along the innerwall of the processing chamber 201. The base end portion of the nozzle51 is positioned to the outside of the side wall of the manifold 209,via the nozzle through hole formed on the side wall of the manifold 209.Further, the tip end portion of the nozzle 51 is positioned to the upperstream side of the gas flow outside of the wafer arrangement region R.Namely, the tip end portion of the nozzle 51 is positioned in the lowerpart outside of the wafer arrangement region R.

With the aforementioned structure, the gas flow in the nozzles 41 to 44and 46 to 49 is made longer than the gas flow in the nozzles 45, 50, 51.

Note that as shown in a connection structure of a piping part as will bedescribed later, the first processing gas can be supplied from thenozzles 41 to 45, respectively. In addition, the second processing gas,being the gas species different from that of the first processing gas,is supplied from the nozzles 46 to 50, respectively. In addition, inaddition to the processing gas, the inert gas is supplied form the tipend portions of the nozzles 41 to 50, respectively. Further, in additionto the processing gas and the inert gas, cleaning gas for gas cleaningcan be supplied from the tip end portions of the nozzles 41 to 45,respectively. Note that in addition to the cleaning gas, the inert gascan be supplied into the processing chamber 201 from the tip end portionof the nozzle 51.

(5) Connection Structure of Piping Parts 61 to 109

An upper stream side end portion of the piping part 61 is connected toan accumulation source (not shown) of the first processing gas, and alower stream side end portion is connected to the upper stream side endportion of the piping parts 62 to 66. The lower streams side endportions of these piping parts 62 to 66 are connected to the upperstream side end portions of piping parts 89 to 93, respectively. Thelower stream side end portions of these piping parts 89 to 93 areconnected to the upper stream side end portions of piping parts 105 to109, respectively. The lower stream side end portions of these pipingparts 105 to 109 are connected to the base end portions (gas inputports) of the nozzles 41 to 45.

The upper stream side end portion of the piping part 75 is connected tothe accumulation source (not shown) of the second processing gas, andthe lower stream side end portion thereof is connected to the upperstream side end portion of the piping parts 76 to 80. The lower streamside end portions of these piping parts 76 to 80 are connected to theupper stream side end portions of the piping parts 94 to 98,respectively. The lower stream side end portions of these piping parts94 to 98 are connected the base end portions of the nozzles 46 to 50.

The upper stream side end portion of the piping part 81 is connected tothe accumulation source (not shown) of the cleaning gas, and the lowerstream side end portion thereof is connected to the upper stream sideend portions of the piping parts 82 and 88. The lower stream side endportion of the piping part 82 is connected to the upper stream side endportions of the piping parts 83 to 87. The lower stream side endportions of these piping parts 83 to 87 are connected to the upperstream side end portions of piping parts 105 to 109, respectively. Thelower stream side end portion of the piping part 88 is connected to thebase end portion of the nozzle 51. Note that the upper stream side endportion of the piping part 88 is also connected to the lower stream sideend portion of the piping part 104. The upper stream side end portion ofthe piping part 104 is connected to the lower stream side end portion ofthe piping part 68.

The upper stream side end portion of the piping part 67 is connected tothe accumulation part (not shown) of the inert gas, and the lower streamside end portion thereof is connected to the upper stream side endportions of the piping parts 68 and 69. The lower stream side endportion of the piping part 68 is connected to the upper stream side endportions of the piping parts 99 to 103. The lower stream side endportions of these piping parts 99 to 103 are connected to the upperstream side end portions of the piping parts 94 to 98. The lower streamside end portion of the piping part 69 is connected to the upper streamside end portion of the piping parts 70 to 74. The lower stream side endportions of these piping parts 70 to 74 are connected to the upperstream side end portions of the piping parts 89 to 93.

In the above description, the first processing gas includes at least oneelement out of a plurality of elements constituting the thin film formedon the main surface of the wafer 200, and the gas capable of depositingthe film by itself singularly is used. In addition, the secondprocessing gas includes at least other one element out of the pluralityof elements constituting the thin film formed on the main surface of thewafer 200, and the gas not capable of depositing the film by itselfsingularly. For example, when a nitride silicon film (Si₃N₄ film) isformed on the main surface of the wafer 200, DCS (dichlorosilane;SiH₂Cl₂), for example, is used as the first processing gas, and NH₃(ammonia) gas is used as the second processing gas, orCH₃—NH—NH₂(monomethylhydrazine) gas and (CH₃)₂—N—NH2 (dimethylhydrazine)gas, etc, is used as an organic ammonia gas. Namely, for exampleNH3-based gas is used as the second processing gas. In addition, forexample, N₂ (nitrogen) gas is used as the inert gas, and for example NF₃(nitrogen trifluoride) gas is used as the cleaning gas. In addition,when a high temperature oxide film (SiO₂ film) is formed, for example,the DCS (dichlorosilane; SiH₂Cl₂) gas or SiH₄(silane) gas is used as thefirst processing gas, and for example, nitrogen oxide gas such as N₂O(nitrogen dioxide) or NO (nitrogen oxide) gas is used as the secondprocessing gas. Note that a case of forming the Si₃N₄ film on the wafer200 by using the DCS gas as the first processing gas and by using theNH₃ gas as the second processing gas, will be explained over an entirebody of this specification, as a typical example.

(6) Insertion Structure of Air Valves 121 to 160 and MFCS 171 to 184

The air valves 121 to 125 and the MFCs 171 to 175 are respectivelyinserted into the piping parts 62 to 66. In this case, the MFCs 171 to175 are inserted to the upper stream side of the air valves 121 to 125,respectively. The air valves 132 to 136 are inserted into the pipingparts 70 to 74, respectively. The air valves 151 to 155 are respectivelyinserted into the piping parts 83 to 87. The air valves 156 to 160 arerespectively inserted into the piping parts 89 to 93.

The air valves 137 to 141, the MFCs 178 to 182, and the air valves 142to 146 are respectively inserted into the piping parts 76 to 80. In thiscase, MFCs 178 to 182 are inserted between air valves 137 and 142, airvalves 138 and 143, air valves 139 and 144, air valves 140 and 145, andair valves 141 and 146, respectively. The air valves 127 to 131 areinserted into piping parts 99 to 103.

The air valve 148 and the MFC 177 are inserted into the piping part 69.In this case, the MFC 177 is inserted to the lower stream side of theair valve 148. The air valve 126 and the MFC 176 are inserted into thepiping part 68. In this case, the MFC 176 is inserted to the lowerstream side of the air valve 126.

The air valve 147 and the MFC 183 are inserted into the piping part 82.In this case, the MFC 183 is inserted into the lower stream side of theair valve 147. The air valves 149, 150 and the MFC 184 are inserted intothe piping part 88. In this case, the MFC 184 is inserted between theair valves 149 and 150.

(7) Relation Between the Present Invention and the First Embodiment

In the above-describe structure, the nozzle 45, the piping part 109, thevalve 160, the piping part 93, the valve 125, the piping part 66, theMFC 175, and the piping part 61 correspond to “the first gas supply partfor supplying the first processing gas to the upper stream side of thegas flow outside of the region where a plurality of substrates arearranged” of the present invention. In addition, the nozzles 41 to 44,the piping parts 105 to 108, the valves 156 to 159, the piping parts 89to 92, the piping parts 62 to 65, the air valves 121 to 124, the MFCs171 to 174, and the piping part 61 correspond to “the second gas supplypart for supplying the first processing gas to the middle parts of thegas flow in the region where a plurality of substrates are arranged” ofthe present invention. In addition, the nozzle 50, the piping part 98,the valve 146, the MFC 182, the valve 141, the piping part 80, and thepiping part 75 correspond to “third gas supply part for supplying thesecond processing gas to the upper stream side of the gas flow outsideof the region where a plurality of substrates are arranged” of thepresent invention. Also, the nozzles 46 to 49, the piping parts 94 to97, the piping parts 76 to 79, the valves 142 to 145, the MFCs 178 to181, the valves 137 to 140, and the piping part 75 correspond to “thefourth gas supply part for supplying the second processing gas to themiddle parts of the gas flow in the region where a plurality ofsubstrates are arranged” of the present invention. Also, an exhaustsystem 33 corresponds to the “exhaust part” of the present invention.Further, the product wafer/monitor wafer arrangement region R₁corresponds to “the region where a plurality of substrates are arranged”of the present invention.

(1-2) Operation

Subsequently, explanation will be given for a method of forming the thinfilm on the wafer 200 by the CVD method, as one step of themanufacturing steps of the semiconductor device. This method is executedby the substrate processing apparatus having the aforementionedprocessing furnace 202. Note that in the explanation given hereunder,the operation of each part constituting the substrate processingapparatus is controlled by the controller 240.

(1) Overall Operation

First, explanation will be given for an overall operation of a case whena prescribed thin film is formed on the surface of the wafer 200.

First, a plurality of wafers 200 are charged (wafer charge) into theboat 217 unloaded from the inside of the process tube 203. Thus, aplurality of, for example, 100 wafers 200, with its diameter set at 300mm, are housed in the boat 217, for forming the thin film. When thewafer charge is finished, the boat 217, having the plurality of wafers200 held therein, is lifted by the boat elevator 115, and as shown inFIG. 3, which is then loaded into the processing chamber 201 (boatloading) (the step of loading the substrate into the processingchamber). In this state, the lower end of the manifold 209 is set in asealed state via the O-ring 220 b.

When this boat load processing is finished, the inside of the processingchamber 201 is vacuum-exhausted by the vacuum exhaust device 246 so thatthe pressure in the processing chamber 201 reaches a desired pressure(vacuum degree). Thus, the atmosphere in the processing chamber 201 isdischarged via the exhaust system 231. At this time, the pressure in theprocessing chamber 201 is measured by the pressure sensor 245. Based onthis measured pressure, an opening degree of the main valve 242 isfeedback-controlled. In addition, the inside of the processing chamber201 is heated by the heater 206 so as to be a desired temperature. Then,based on temperature information detected by the temperature sensor 263,the power supply condition to the heater 206 is feedback-controlled, soas to have a desired temperature distribution. Specifically, the powersupply condition to the heater 206 is controlled, so that a main surfacetemperature of the plurality of wafers 200 loaded into the processingchamber 201 is increased up to the temperature at which at least both ofthe first processing gas and the second processing gas are thermallydecomposed, and the main surface temperature of the plurality of wafers200 are made substantially uniform over the entire body of the regionwhere the plurality of wafers are arranged. Subsequently, by means ofthe rotation mechanism 254, the wafer 200 is rotated by rotation of theboat 217.

When the vacuum exhaust processing is finished, the film depositionprocessing is executed. Namely, the gas supplied from a supply source ofthe processing gas and controlled to be a desired flow rate by the MFC241, is introduced into the processing chamber 201 from the nozzle 230through the gas supply system 232. The introduced gas is drifted upwardin the processing chamber 201, is flown into the cylindrical space 250form the upper end opening of the inner tube 204, and is exhausted fromthe exhaust system 231. The processing gas is brought into contact withthe surface of the wafer 200 when passing through the inside of theprocessing chamber 201, and at this time, the thin film is deposited onthe surface of the wafer 200 by thermal CVD reaction. Note that detailsof the film deposition will be described later.

When this film deposition processing is finished, after-purge processingis executed. Namely, the inert gas is supplied into the processingchamber 201 form a gas output port (tip end portion) of the gas supplysystem 232. In addition, at this time, the vacuum exhaust processing isexecuted by the vacuum exhaust device 246. As a result, the atmospherein the processing chamber 201 is cleaned by the inert gas.

When this after-purge processing is finished, the atmospheric pressurereturning processing is executed. Namely, the vacuum exhaust processingis stopped, and only supply processing of the inert gas is executed. Asa result, the pressure in the processing chamber 201 is returned to anormal pressure.

When this atmospheric pressure processing is finished, boat unloadingprocessing is executed. Namely, the seal cap 219 is lowered by the boatelevator 115, then the lower end of the manifold 209 is opened, and analready film deposited wafer 200 is unloaded (boat unloading) to theoutside of the process tube 203 form the lower end of the manifold 209in a state of being held by the boat 217 (the step of unloading thesubstrate from the processing chamber). Thereafter, the already filmdeposited wafer 200 is recovered by the boat 217 (wafer discharge), andthe processing of the first batch is finished. Similarly, regarding thesecond batch and thereafter, the aforementioned processing is executedto the next plural wafers 200.

(2) Operation for Cleaning the Inner Wall, Etc, of the Process Tube 203

Next, explanation will be given for the operation for cleaning theinside, etc, of the process tube 203.

In this case, the cleaning gas is supplied into the processing chamber201 from a gas output port (tip end portion) of the nozzle 51. Thus, thereaction product deposited on the inner wall of the process tube 203 andouter walls of the nozzles 41 to 51 are etched. In addition, at thistime, the vacuum exhaust processing is executed by the vacuum exhaustdevice 246. Thus, the etched reaction product is discharged to theoutside of the processing chamber 201 via the exhaust system 231.

(3) Operation for Cleaning the Inner Wall of the Nozzles 41 to 45

Next, the operation for cleaning the inner wall of the nozzles 41 to 45will be explained.

In this embodiment, this cleaning processing is simultaneously performedas the cleaning processing of the inner wall of the process tube 203. Inthis case, the cleaning gas is supplied from the piping parts 83 to 87to the gas input port (base end portion) of the nozzles 41 to 45 forfilm deposition processing. Thus, the reaction product deposited on theinner wall of the nozzles 41 to 45 is etched by the cleaning gas. Inaddition, at this time, the vacuum exhaust processing is executed by thevacuum exhaust device 246. Thus, the etched reaction product isoutputted (discharged) into the processing chamber 201 form the gasoutput ports (tip end portions) of the nozzles 41 to 45. Then, thereaction product outputted (discharged) into the processing chamber 201is discharged to the outside of the processing chamber 201 via theexhaust system 231.

Note that this cleaning processing is performed one by one, bysequentially selecting five nozzles 41 to 45 one by one according to apreviously defined order. In this case, the inert gas is supplied tofour selected nozzles from four piping parts 70 to 74. In addition, atthis time, the inert gas is supplied to five nozzles 46 to 50 from thepiping parts 94 to 98. Thus, over-etching of the nozzles is prevented.

Namely, usually the cleaning gas is remained inside of the nozzle thathas undergone the cleaning processing. Accordingly, when such a state isleft as it is, the entire body of the inner wall of the nozzle isover-etched. However, in this embodiment, the inert gas is supplied tothe nozzle that has undergone the cleaning processing. Thus, thecleaning gas remained inside of this nozzle is sent out. As a result,the over-etching due to residual cleaning gas is prevented.

In addition, in this embodiment, the cleaning processing of the innerwall of the nozzles 41 to 45 is performed simultaneously with thecleaning processing of the inner wall of the process tube 203. At thistime, when the inert gas is not supplied to the nozzle that has notundergone the cleaning processing, the cleaning gas supplied into theprocessing chamber 201 by the nozzle 51 intrudes on the inside of thenozzle that has not undergone the cleaning processing. As a result,over-etching occurs at the tip end portions of the inner wall of thenozzles 41 to 45 and the nozzles 46 to 50. However, in this embodiment,the inert gas is supplied to the nozzle that has undergone the cleaningprocessing and the nozzle that has not undergone the cleaningprocessing. Thus, intrusion of the cleaning gas to these nozzles isinhibited. As a result, the over-etching due to the intrusion of thecleaning gas is prevented.

(4) Gas Supply Operation of the Gas Supply System 232

Next, the gas supply operation of the gas supply system 232 will beexplained.

(4-1) Operation for Performing the Film Deposition Processing

First, the operation for performing the film deposition processing willbe explained. The film deposition processing has the steps of: supplyingthe first processing gas to the upper stream side of the gas flow;supplying the first processing gas to the middle parts of the gas flow;supplying the second processing gas to the upper stream side of the gasflow; and supplying the second processing gas to the middle parts of thegas flow; and forming the thin film.

First, the air valves 121 to 125, 137 to 146, 156 to 160 are opened bythe controller 240, and other air valves 126 to 136, and 147 to 155 areclosed.

Thus, the first processing gas (DCS gas) is supplied to the nozzles 41to 45, via the piping parts 61 to 66, 89 to 93, 105 to 109.

Then, the first processing gas is supplied to the upper stream sideoutside of the region (product wafer/monitor wafer arrangement regionR1) where a plurality of wafers 200 loaded into the processing chamber201 are arranged (supply to the upper stream side of the gas flow of thefirst processing gas).

In addition, the first processing gas is supplied to the middle parts ofthe gas flow in the region (product wafer/monitor wafer arrangementregion R₁) where the plurality of wafers 200 are arranged (supply of thefirst processing gas to the middle parts of the gas flow). Namely, thefirst processing gas is respectively supplied to approximately firstwafer from the nozzle 44, approximately 26-th wafer from the nozzle 43,approximately 51^(st) wafer from the nozzle 42, and approximately 76-thwafer from the nozzle 41 of the stacked 100 wafers 200. At this time,the first processing gas is supplied from the upper stream side of thegas flow, namely from the lower side of the processing chamber 201.

In addition, in this case, regarding the first processing gas suppliedto the nozzles 41 to 45, a target value of the flow rate per unit timeis designated. Thus, the flow rate of the first processing gas suppliedto the nozzles 41 to 45 is controlled by the MFCs 171 to 175. As aresult, the flow rate of the first processing gas supplied to thenozzles 41 to 45 per unit time is set as the aforementioned targetvalue.

In addition, simultaneously with supplying the first processing gas (DCSgas) to the nozzles 41 to 45, the second processing gas (NH3 gas) issupplied to the nozzles 46 to 50, via the piping parts 75 to 80 and 94to 98.

Then, from the nozzle 50, the second processing gas is supplied to theupper stream side outside of the region (product wafer/monitor waferarrangement region R1) where the plurality of wafers 200 loaded into theprocessing chamber 201 (supply of the second processing gas to the upperstream side of the gas flow).

In addition, from the nozzles 46 to 49, the second processing gas issupplied to the middle parts of the gas flow in the region (productwafer/monitor wafer arrangement region R1) where the plurality of wafers200 are arranged (supply of the second processing gas to the middleparts of the gas flow). Namely, the second processing gas isrespectively supplied to approximately first wafer from the nozzle 49,approximately 26-th wafer from the nozzle 48, approximately 51^(st)wafer from the nozzle 47, and approximately 76-th wafer from the nozzle46 of 100 stacked wafers 200.

In addition, in this case, regarding the second processing gas, thetarget value of the flow rate per unit time supplied to the nozzles 46to 50 is designated. Thus, the flow rate per unit time of the secondprocessing gas supplied to the nozzles 46 to 50 is controlled by theMFCs 178 to 182. As a result, the flow rate of the second processing gasper unit time supplied to the nozzles 46 to 50 is set to be theaforementioned target value.

As described above, in this embodiment, the first processing gas (DCSgas) and the second processing gas (NH₃ gas) are simultaneously suppliedinto the processing chamber 201 and are thermally decomposed, and achemical reaction occurs between one element (Si) contained in the firstprocessing gas (DCS gas) and one element contained in the secondprocessing gas (NH₃), to form an amorphous material (Si₃N₄), and theSi₃N₄ (nitride silicon) film is formed on the plurality of wafers 200(the step of forming the thin film). The reaction formula at this timeis as follows.

3SiH₂Cl₂+10NH₃→Si₃N₄+6NH₄Cl+6H₂  (A)

Specifically, as shown in FIG. 15, regarding the first processing gassupplied from the nozzle 45 and the second processing gas supplied fromthe nozzle 50, the chemical reaction occurs between one elementcontained in the first processing gas and one element contained in thesecond processing gas, to form the amorphous material, and the thin filmis mainly formed on the first to 25-th wafer of the wafers 200 from theupper stream side (lower side of the processing chamber 201) of the gasflow. Also, the first processing gas supplied from the nozzle 43 and thesecond processing gas supplied from the nozzle 48 are thermallydecomposed. Then, one element contained in the first processing gas andthe chemical reaction occurs between one element contained in the firstprocessing gas and one element contained in the second processing gas,and the thin film is mainly formed on the 26-th to 50-th wafers 200.Similarly, the thin film is formed on the 76-th to 100-th wafers 200 bysupplying the processing gas from the nozzle 42 and the nozzle 47, andthe thin film is formed on the 51-st to 75-th wafers 200 by supplyingthe processing gas from the nozzle 41 and the nozzle 46, and the thinfilm is formed on the 76-th to 100-th wafers 200 by supplying theprocessing gas from the nozzle 41 and the nozzle 46.

Note that in order to accelerate the reaction between the firstprocessing gas and the second processing gas, preferably the temperatureof the main surface of the wafer 200 is increased to the temperature atwhich both of the first processing gas and the second processing gas arethermally decomposed. Namely, the inside of the processing chamber 201is preferably heated and maintained, so as to be made uniform over theentire body of the region where the wafers 200 are arranged, at aselected temperature in a temperature range from 600° C. to 800° C. Forexample, consumption of the DCS gas is increased when the temperature ofthe main surface of the wafer 200 is set at approximately 760° C.

In addition, there is such a characteristic that when the reactiontemperature of the first processing gas and the second processing gas ischanged, a composition rate of a silicon (Si) element and nitrogenelement (N) in the formed nitride silicon film is changed. Also, thereis such a characteristic that when the composition rate of the siliconelement and the nitrogen element is changed, dielectric constant of thenitride silicon film is changed. Accordingly, in order to uniformlymaintain a film quality of the nitride silicon film between wafers 200,preferably the main surface temperature of each wafer 200 is maintainedsubstantially uniform over the entire body of the region (productwafer/monitor wafer arrangement region R1) where a plurality of wafers200 are arranged. Note that the same thing can be said for the oxidefilm formed on the wafer 200.

Further, in order to uniformly maintain the composition rate of thesilicon element and the nitrogen element in the nitride silicon film,and the composition rate of the silicon element and the oxygen elementin the oxide film, between the plurality of wafers 200, it is preferableto substantially uniformly maintain the ratio of the supply amounts ofthe first processing gas and the second processing gas over the entirebody of the region (product wafer/monitor wafer arrangement region R1)where the plurality of wafers 200 are arranged. Accordingly, it ispreferable to make the flow rate ratio same substantially, between theflow rate ratio of the supply amount of the gas supplied to the middleparts of the gas flow of the first processing gas to the supply amountof the gas supplied to the upper stream side of the gas flow of thefirst processing gas, and the flow rate ratio of the supply amount ofthe gas supplied to the middle parts of the gas flow of the secondprocessing gas to the supply amount of the gas supplied to the upperstream side of the gas flow of the second processing gas.

Note that as described above, when the nitride silicon film iscollectively formed on the plurality of wafers 200, the supply amount ofthe NH₃ gas is made to be 3 times or 10 times the supply amount of theDCS gas, to form the nitride silicon film with a small film stress anduniform between the wafers 200 and in-surface of the wafer 200.

(4-2) Operation for Performing After-Purge Processing of the ProcessingGas

Next, the operation for performing the after-purge processing of theprocessing gas will be explained.

In this case, the air valves 126 to 136, 148, 156 to 160 are opened, andother air valves 121 to 125, 137 to 147, 149 to 155 are closed. Thus,the inert gas is supplied to the nozzles 46 to 50, via the piping parts67, 68, 99 to 103, and 94 to 98. In this case, the flow rate per unittime of the inert gas supplied to the nozzles 46 to 50 is controlled bythe MFC 176, based on an instruction of the controller 240.

In addition, simultaneously with the supply of the inert gas to thenozzles 46 to 50, the inert gas is supplied to the nozzles 41 to 45, viathe piping parts 69, 70 to 74, 89 to 93, and 105 to 109. In this case,the flow rate per unit time of the inert gas supplied to the nozzles 41to 45 is controlled by the MFC 177, based on the instruction of thecontroller 240.

In addition, at this time, the vacuum exhaust processing is executed bythe vacuum exhaust device 246. As a result, the residual gas remained inthe gas supply system 232, the processing chamber 201, and the exhaustsystem 231 is removed to the outside of the exhaust system 231.

(4-3) Operation for Performing the Cleaning Processing

Explanation will be given hereunder for the operation for performing thecleaning processing of the inner wall, etc, of the process tube 203 andthe inner wall of the nozzles 41 to 45.

In the multi-system nozzle type CVD device, the temperature of a regionconfronted with the heater 206 out of an inner wall of the process tube203 and an outer wall of the nozzles 41 to 44, and 46 to 49 is increasedup to a film deposition temperature of Si₃N₄. Therefore, the Si₃N₄ film,being the reaction product, is deposited on the region confronted withthe heater 206 out of the inner wall of the process tube 203 and theouter wall of the nozzles 41 to 44 and 46 to 49. Then, the reactionproduct is peeled off when its deposit amount is increased, resulting inparticles. Accordingly, the inner wall of the process tube 203 and theouter wall of the nozzles 41 to 44, and 46 to 49 must be cleaned.

In addition, the temperature of the region confronted with the heater206 out of the nozzles 41 to 44 and 46 to 49 is also increased up to thefilm deposition temperature. Thus, mainly the DCS gas is thermallydecomposed at 500° C. or more, and Poly-Si, being the reaction product,is deposited on the inner wall of the nozzles 41 to 44 for supplying theDCS gas in particular. Further, although the deposit is smaller than thedeposit of Poly-Si due to a thermal decomposing reaction of the DCS gason the inner wall of the nozzles 41 to 44, the Si₃N₄ film, etc, beingthe reaction product, is formed on the inner wall of the nozzles 41 to44, by allowing the NH₃ gas and an N₂ component obtained by thermallydecomposing the NH₃ gas to enter into the nozzles 41 to 44. Then, whenthe deposit amount is increased, the reaction product is peeled off,resulting in particles. Accordingly, the inner wall of the nozzles 41 to44 must also be cleaned similarly to the inner wall of the process tube203.

In addition, in a process of deposing the Si₃N₄ film on the wafer 200,ammonium chloride (NH₄C1), being the reaction product, is generated (seethe aforementioned reaction formula (A)). Then, the ammonium chloridemainly flows to the lower stream side of the gas flow rather than theregion confronted with the heater 206. Then, the ammonium chloride isadhered to the inner wall, etc, of the exhaust pipe constituting theexhaust system 7 of the lower streams side when the temperature is setin a low temperature state of under 150° C. or around. In addition,although in a smaller amount, the ammonium chloride is also generated onthe upper stream side of the gas flow rather than the region confrontedwith the heater 206. Then, when the temperature is set in a lowtemperature state of under 150° C. or around, the ammonium chloride isadhered to the inner wall, etc, of the upper stream side and issolidified. The solidified ammonium chloride is also peeled off when itsdeposit is increased, resulting in particles. Accordingly, the innerwall, etc, of the process tube 203, being the outside region confrontedwith the heater 206, must also be cleaned.

In addition, the nozzle 45 for film deposition is provided in a lowerpart of the region confronted with the heater 206. Therefore, thetemperature inside of the nozzle 45 is not increased up to the filmdeposition temperature, and there is almost no reaction productdeposited on the inner wall of the nozzle 45. However, the ammoniumchloride also flows into the nozzle 45. Then, when the temperature isset in a low temperature state of under 150° C. or around, the ammoniumchloride is adhered to the inner wall, etc, of the nozzle 45 and issolidified. The solidified ammonium chloride causes the nozzle 45 toclog, or flies after adhering to the inner wall, etc, to allow theparticles to generate. Accordingly, the inner wall of the nozzle 45 mustalso be cleaned.

In this case, the air valves 137 to 146 are closed by the controller240. Thus, supply of the first processing gas to the nozzles 46 to 50 isinhibited. In addition, in this case, the air valves 126, 127 to 131 areopened. Thus, the inert gas is supplied to the nozzles 46 to 50 via thepiping parts 94 to 98. In this case, the flow rate per unit time of theinert gas supplied to the nozzles 46 to 50 is controlled by the MFC 176,based on the instruction of the controller 240.

In addition, in this case, the air valves 149 and 150 are opened. Thus,the cleaning gas is supplied to the nozzle 51 via the piping parts 81and 88. In this case, the flow rate per unit time of the cleaning gassupplied to the nozzle 51 is controlled by the MFC 184, based on theinstruction of the controller 240.

Further, in this case, the air valves 121 to 125 are closed, and the airvalves 132 to 136, 148, and 156 to 160 are opened. Thus, the supply ofthe second processing gas to the nozzles 41 to 45 is inhibited, and thesupply of the inert gas becomes possible. In this case, which nozzles 41to 55 are supplied with the inert gas, is decided by which inner wallsof the nozzles 41 to 45 are cleaned.

Further, in this case, the air valves 147, and 151 to 155 are opened.Thus, the supply of the cleaning gas to the nozzles 41 to 45 becomespossible. In this case, which nozzles 41 to 45 are supplied with thecleaning gas, is decided by which inner walls of the nozzles 41 to 55are cleaned.

Now, the inner wall of the nozzle 41 is assumed to be cleaned. In thiscase, the air valve 151 is opened, and the air valves 152 to 155 areclosed. Also in this case, the air valves 157 to 160 are opened, and theair valve 156 is closed. Thus, in this case, the cleaning gas issupplied to a gas input port (base end portion) of the nozzle 41, andthe inert gas is supplied to the gas input port of the nozzles 42 to 45.As a result, in this case, the inner wall of the nozzle 41 is cleanedand the over-etching of the inner walls of the nozzles 42 to 45 areprevented.

When a cleaning object is switched to the nozzle 42 from this state, theair valve 152 is opened this time, and the air valves 151, and 153 to155 are closed. In addition, in this case, the air valves 156, and 158to 160 are opened, and the air valve 157 is closed. Thus, in this case,the cleaning gas is supplied to the gas input port of the nozzle 42, andthe inert gas is supplied to the gas input port of the nozzles 41, and43 to 45. As a result, in this case, the inner wall of the nozzle 42 iscleaned, and the over-etching of the inner wall of the nozzles 41, and43 to 45 is prevented.

When the cleaning object is switched to the nozzle 43 from this state,the air valve 153 is opened this time, and the air valves 151, 152, 154,and 155 are closed. In addition, in this case, the air valves 156, 157,159, and 160 are opened, and the air valve 158 is closed. Thus, in thiscase, the cleaning gas is supplied to the gas input port of the nozzle43, and the inert gas is supplied to the gas input port of the nozzles41, 42, 44, and 45. As a result, in this case, the inner wall of thenozzle 43 is cleaned, and the over-etching of the inner walls of thenozzles 41, 42, 44, and 45 is prevented.

In the same way hereunder, the inner wall of the nozzle 44 is cleaned,and the over-etching of the inner wall of the nozzles 41 to 43, and 45is prevented. In addition, the inner wall of the nozzle 45 is cleaned,and the over-etching of the inner wall of the nozzles 41 to 44 isprevented.

Note that in the cleaning operation hereunder, the flow rate per unittime of the cleaning gas supplied to the nozzles 41 to 45 is controlledby the MFC 183, based on the instruction of the controller 240.Similarly, the flow rate per unit time of the inert gas supplied to thenozzles 41 to 45 is controlled by the MFC 177, based on the instructionof the controller 240.

In this case, the flow rate per unit time of the cleaning gas suppliedto the nozzles 41 to 45 is decided based on a length of a part on whichthe reaction product is deposited. This is because the cleaning time ofthe nozzles 41 to 55 is set to be same. Thus, the flow rate per unittime of the cleaning gas supplied to the nozzles 41 to 45 is largest atthe nozzle 41, secondary large at the nozzle 42, thirdly large at thenozzle 43, fourthly large at the nozzle 44, and smallest at the nozzle45.

Note that as described above, kinds and the film thickness aredifferent, among the reaction product deposited on the inner wall of theprocess tube 203 and the outer wall of the nozzles 41 to 44 and 46 to49, the reaction product deposited on the inner wall of the nozzles 41to 44, and reaction product deposited on the outside region confrontedwith the heater 206 and on the inner wall of the nozzle 45. Therefore,when these reaction products are cleaned, preferably cleaning conditionsare optimized according to the kind and film thickness of each reactionproduct and simultaneously efficient cleaning is performed.

(4-4) Operation for Performing after-Purge Processing of the CleaningGas

Next, the operation for performing the after-purge processing of thecleaning gas will be explained.

In this case, the air valves 126, 150, 148, 132 to 136, 156 to 160 areopened, and other air valves 121 to 125, 127 to 131, 137 to 147, 149,and 151 to 155 are closed. Thus, the inert gas is supplied to the nozzle51 via the piping parts 67, 68, 88. In this case, the flow rate per unittime of the inert gas supplied to the nozzle 51 is controlled by the MFC176, based on the instruction of the controller 240.

In addition, simultaneously with the supply of the inert gas to thenozzle 51, the inert gas is supplied to the nozzles 41 to 45, via thepiping parts 67, 69, 70 to 74, 89 to 93, and 105 to 109. In this case,the flow rate per unit time of the inert gas supplied to the nozzles 41to 45 is controlled by the MFC 177, based on the instruction of thecontroller 240.

In addition at this time, the vacuum exhaust processing is executed bythe vacuum exhaust device 246. As a result, the residual gas remained inthe gas supply system 232, the processing chamber 201, and the exhaustsystem 231 is removed to the outside of the exhaust system 231.

(1-3) Advantages

As described above in detail, according to the embodiments of thepresent invention, the following one or more advantages are exhibited.

(1) As described above, when the processing gas is supplied only fromthe nozzles 45 and 50, a large amount of processing gas must be suppliedinto the processing chamber 201. However, the boat 217 and the pluralityof wafers 200 exist in the processing chamber 201, and therefore thereis not a small exhaust resistance. Therefore, the pressure on the upperstream side of the gas flow becomes higher than the pressure on thelower stream side of the gas flow, thus relatively increasing a reactionspeed on the upper stream side of the gas flow. As a result, in thewafer 200 placed on the upper stream side of the gas flow having highreaction speed, the film of a peripheral edge portion of the wafer 200becomes thick and the film in a central part of the wafer 200 becomesthin, thus deteriorating uniformity of the film thickness in the surfaceof the wafer 200 in some cases. In addition, the thickness of the formedthin film is different, between the wafer 200 placed on the upper streamside of the gas flow having a high reaction speed, and the wafer 200placed on the lower stream side of the gas flow having a low reactionspeed. For example, as shown in FIG. 12( b), in some cases, theuniformity of the film thickness between wafers 200 is deteriorated.FIG. 12( b) shows a film thickness distribution when the temperaturegradient is not provided in the plurality of wafers in the method of notsupplying the processing gas to the middle parts. Particularly, when thewafer 200 has a further large diameter or the pattern on the surface ofthe wafer is further densified, the problem becomes remarkable. Further,under a different pressure condition, the composition raten of theformed thin film is changed, and a film quality (for example, thedielectric constant, a stress value, and an etching rate) is alsochanged.

Meanwhile, according to this embodiment, the first processing gas (DCSgas) and the second processing gas (NH₃ gas) are supplied from themiddle parts of the gas flow, by using the nozzles 41 to 44 and nozzles46 to 49. Thus, the supply amount of the processing gas on the upperstream side of the gas flow can be reduced, and a pressure differencebetween the upper stream side and the lower stream side of the gas flowcan be corrected (made small). As a result, the film thickness betweenthe wafers 200 and the uniformity of the composition rate are improved,and the film thickness in the surface of the wafer 200 and theuniformity of the composition rate are also improved.

(2) In addition, the processing gas supplied to the upper stream side ofthe gas flow in the processing chamber 201 is reacted and consumedmainly on the main surfaces of the plurality of wafers 200, inaccordance with the flow from the upper stream side to the lower streamside in the processing chamber 201. Therefore, when the processing gasis supplied only from the nozzles 45 and 50, the processing gas becomesgradually insufficient on the lower stream side of the gas flow. As aresult, the reaction speed becomes low on the lower stream side of thegas flow, and the thickness of the formed thin film becomes graduallythin, and for example as shown in FIG. 12B, the uniformity in the filmthickness between the wafers 200 is deteriorated in some cases.Particularly, when the wafer 200 has a further large diameter or thepattern on the surface of the wafer becomes further densified, an amountof consumed gas is increased, thus making the problem remarkable.

Meanwhile, according to this embodiment, the first processing gas (DCSgas) and the second processing gas (NH₃ gas) are supplied in the form ofreplenishing from the middle parts of the gas flow. Accordingly, evenwhen the wafer 200 has a further large diameter or the pattern on thesurface of the wafer is further densified, the difference in the supplyamount in a stacking direction (the upper stream side and the lowerstream side of the gas flow) of the wafers 200 can be reduced, thusmaking it possible to make the film thickness between the wafers 200uniform, and improve the uniformity in the surface of the wafer 200.

(3) In addition, the processing gas supplied from the nozzles 41 to 50is supplied to a prescribed region while being gas flow-controlledindependently. Therefore, the difference in the supply amount in thestacking direction of the wafers 200 can be further reduced, thus makingit possible to make the film thickness between the wafers 200 uniformand improve further uniformity in the surface of the wafer 200.(4) Thus, it is possible to reduce an influence of a film thicknessfluctuation caused by consuming the processing gas, and deterioration infilm thickness characteristics such as a reduction of a CVD filmcoverage of the pattern. According to this embodiment, eight nozzles 41to 44, and 46 to 49 are raised in the processing chamber in which 100wafers are installed, and from the respective four places, the firstprocessing gas or the second processing gas is respectively supplied. Asa result, one gas supply point is in charge of the film deposition (gassupply) to 25 wafers, and the film thickness fluctuation caused byconsuming the processing gas and the influence of the deterioration inthe film deposition characteristics such as the reduction of the CVDfilm coverage of the pattern can be reduce by 25%, compared to a case ofdepositing 100 films by one supply point. Accordingly, even when thewafer 200 has a further larger diameter, and the pattern on the surfaceof the wafer is further densified, excellent film depositioncharacteristics can be maintained similarly to a case that the patternon the surface of the wafer is not densified.(5) Particularly, in the wafer having a large diameter of 300 mm ormore, a high productivity can be realized, while maintaining excellentfilm deposition characteristics on the wafer having high pattern densityby a pressure reducing CVD method. As a result, the wafer having a largediameter of 300 mm or more can realize both of high productivity and lowloading effect. Here, the loading effect refers to a state that when thewafer 200 having high pattern density (namely, large surface areas withmany irregularities) is processed, the processing gas is easily consumedby a reaction with the wafer 200 on the upper stream side, and thereforethe film thickness tends to be different (the film becomes thinner onthe lower stream side) between the wafer on the upper stream side andthe wafer on the lower stream side, thus deteriorating the uniformitybetween the wafers 200.(6) In addition, as described above, when the reaction temperature ofthe first processing gas and the second processing gas is changed, thereis such characteristics that the composition rate of the silicon (Si)element and the nitrogen element (N) in the formed nitride silicon filmand the composition rate of the silicon (Si) element and the oxygen (O)element in the oxide film are changed. Also, there is suchcharacteristics that when the composition rate of the silicon elementand the nitrogen element and the composition rate of the silicon elementand the oxygen element are changed, the dielectric constant of thenitride silicon film and the oxide film is changed. Here, in order tosolve a non-uniformity of the film thickness, when film deposition isperformed so that the temperature in the processing chamber 201 ismaintained to be gradually increased, from the upper stream side of thegas flow (lower side of the processing chamber) to the lower stream sideof the gas flow (upper side of the processing chamber), as shown in FIG.12( a), loading effect can be suppressed. However, this causes thecomposition rate of silicon and nitrogen to change, and results in anon-uniform film quality such as the dielectric constant between wafers200. FIG. 12( a) shows a film thickness distribution in a method of notsupplying the processing gas to middle parts, when a temperaturegradient is formed on a plurality of wafers.

Meanwhile, according to this embodiment, the thin film can be formedwithout forming the temperature gradient in the processing chamber.Therefore, the thin film with uniform film thickness and uniform filmquality such as the dielectric constant can be formed.

(7) Particularly, when the particles are generated on the upper streamside beyond a wafer placement region, the particles are easily adheredto the thin film, etc, on the wafer 200. Therefore, preferably ammoniumchloride is not allowed to be adhered to the thin film on the upperstream side beyond the wafer placement region. According to thisembodiment, the gas is supplied even in the middle place of the gas flowof the wafer placement region, thus making it possible to make the gassupply amount small on the upper stream side beyond the wafer placementregion, and an amount of formation of ammonium chloride on the upperstream side can be suppressed.

In addition, there is a component composed of a metal member such as amanifold on the upper stream side beyond the wafer placement region.C1-based substances such as ammonium chloride and DCS gas react withmetal, thereby separating elements such as Fe and Cu from the metalmember. When this metal element is adhered to the wafer 200, a devicefailure is caused thereby. According to this embodiment, the C1-basedgas is supplied in the middle, even in the middle parts of the gas flowof the wafer placement region. Therefore, the gas supply amount in thewafer placement region can be made small, a formation amount of theammonium chloride on the upper stream side can be suppressed, and metalcontamination can be suppressed.

(8) In addition, according to this embodiment, the Si₃N₄ filmaccumulated in a region opposed to the heater 206, out of the inner wallof the process tube 203 and the outer wall of the nozzles 41 to 44 and46 to 49, is subjected to cleaning processing by supplying the cleaninggas from the nozzle 51. Meanwhile, when the Poly-Si film, etc,accumulated on the inner walls of the nozzles 41 to 45 is subjected tocleaning processing, it is performed by supplying the cleaning gas to anentire body of the inner walls of the nozzles 41 to 45. As a result, itbecomes possible to apply cleaning processing to the deposit ofdifferent kind, and it is possible to clean the inner wall of theprocess tube 203 and the outer walls of the nozzles 41 to 44 and 46 to49, and the entire body of the inner walls of the nozzles 41 to 45.(9) Further, according to this embodiment, the inert gas is supplied tothe nozzle to which no cleaning gas is supplied, out of the nozzles 41to 45. Thus, over-etching of the nozzles 41 to 45 can be prevented.(10) By cleaning the entire body of the inner walls of the nozzles 41 to45, and by preventing the over-etching of the nozzles 41 to 45, theservice life of the nozzles 41 to 45 can be extended. As a result, areplacement cycle of the nozzles 41 to 45 can be extended. Specifically,when the replacement cycle of the nozzles 41 to 45 in a conventionaldevice is set as one month, this cycle can be extended to six months inthis embodiment. Thus, the number of times of time-consuming replacementwork (detaching and attaching work) can be reduced to ⅙ of theconventional number of times. As a result, an operating rate of thedevice can be improved.(11) Further in addition, according to this embodiment, the flow rate ofthe cleaning gas per unit time supplied to the nozzles 41 to 45 isdecided based on, for example, a length of a part on which the reactionproduct is deposited. Thus, the same cleaning time for the inner wallsof the nozzles 41 to 45 can be obtained. Therefore, in addition tocleaning the nozzles 41 to 45 by sequentially selecting the nozzle oneby one, it is also possible to clean the nozzles 41 to 45 bysimultaneously selecting a plurality of nozzles. This contributes toshortening the time required for cleaning.

(2) Second Embodiment

As described above, the gas capable of depositing the film by itself isused as the first processing gas. Therefore, thermal decomposingreaction of the DCS gas occurs on the inner wall of the nozzles 41 to 44for supplying the first processing gas (DCS gas), to deposit the Poly-Sifilm. Meanwhile, the gas not capable of depositing the film by itself isused as the second processing gas (NH₃ gas). Namely, similarly to theDCS gas, a part of the NH₃ gas causes the thermal decomposing reactionto occur. However, in this case, the NH₃ gas is decomposed into N₂ andH₂, and therefore the thin film is not deposited on the inner walls ofthe nozzles 46 to 49. Accordingly, the thin film is not deposited on theinner walls of the nozzles 46 to 49, unless backflow (invasion) of theDCS gas and Si component obtained by thermally decomposing the DCS gasoccurs. From such a circumstance, in the first embodiment, the pipingpart 88 for supplying the cleaning gas (NF₃ gas) is not connected to thepiping parts 94 to 98 for supplying the NH₃ gas, and only the innerwalls of the supply nozzles 41 to 45 for supplying the DCS gas arecleaned.

However, although the deposit amount is smaller than that of the innerwalls of the nozzles 41 to 45 for supplying the DCS gas, the reactionproduct such as a solid material composed of the ammonium chloride(NH₄C1) is also adhered to the inner walls of the nozzles 46 to 50 forsupplying the NH₃ gas. Accordingly, preferably not only the inner wallsof the nozzles 41 to 45 but also the inner walls of the nozzles 46 to 50are cleaned. In the multi-system nozzle type CVD device of thisembodiment, as shown in FIG. 2, similarly to the nozzles 41 to 45, theinner walls of the nozzles 46 to 50 can also be cleaned.

(2-1) Structure

FIG. 2 is a view showing the structure of the gas supply system of theprocessing furnace according to a second embodiment of the presentinvention. A basic constitutional element is the same as theconstitutional element corresponding to the first embodiment explainedby using FIG. 1, and therefore explanation therefore is omitted.Different points between the structure of the second embodiment and thestructure of the first embodiment are as follows. Namely, piping parts110 to 115, valves 161 to 166, 167 to 171, and MFC 185 are added.

In the second embodiment, the lower stream side end portion of thepiping part 81 is connected to the upper stream side end portion of thepiping part 110. The lower stream side end portion of the piping part110 is connected to the upper stream side end portions of the pipingparts 111 to 115. The lower stream side end portions of the piping parts111 to 115 are respectively connected to the upper stream side endportions of the piping parts 94 to 98.

The air valves 161 and the MFC 185 are inserted into the piping part110. In this case, the MFC 185 is inserted into the lower stream side ofthe air valve 161. The air valves 162 to 166 are respectively insertedinto the piping parts 111 to 115. The air valves 167 to 171 arerespectively inserted into the piping parts 94 to 98 of the lower streamside from the connection part between the lower stream side end portionof the piping parts 99 to 103 and the upper stream side end portion ofthe piping parts 94 to 98.

Note that the air valves 162 to 166 and the air valves 167 to 171 afunction of selectively supplying into the nozzles 46 to 50, thecleaning gas flowing through the piping parts 111 to 115 and the gas(the processing gas or the inert gas) flowing through the piping parts77 to 80 and 79 to 103.

(2-2) Operation for Performing the Cleaning Processing

Next, an operation for performing the cleaning processing to the innerwalls of the nozzles 46 to 50 will be explained.

In this case, the air valves 137 to 146 are closed by the controller240, and the air valves 127 to 131, and 167 to 171 are opened. Thus, thesupply of the second processing gas (NH₃ gas) to the nozzles 46 to 50 isinhibited, thus making it possible to supply the inert gas. In thiscase, which nozzle 46 to 50 is selected to supply the inert gas, isdecided by which nozzles 46 to 50 is selected to clean the inner wall.

Further in addition, in this case, the air valves 161 to 166 are opened.Thus, the supply of the cleaning gas to the nozzles 46 to 50 becomeseffective. In this case, which nozzles 46 to 50 is selected to supplythe cleaning gas, is decided by which nozzles 46 to 50 is selected toclean the inner wall.

Now, the inner wall of the nozzle 46 is assumed to be cleaned. In thiscase, the air valve 162 is opened, and the air valves 163 to 166 areclosed. In addition in this case, the air valves 128 to 131, and 168 to171 are opened, and the air valves 127 and 167 are closed. Thus, in thiscase, the cleaning gas is supplied to a gas input port (base endportion) of the nozzle 46, and the inert gas is supplied to the gasinput ports of the nozzles 47 to 50. As a result, in this case, theinner wall of the nozzle 46 is cleaned, and the over-etching of theinner wall of the nozzles 47 to 50 is prevented.

When a cleaning object is switched to the nozzle 47 from this state, theair valve 163 is opened this time, and the air valves 162, and 164 to166 are closed. Also, in this case, the air valves 127, 129 to 131, 167,and 169 to 171 are opened, and the air valves 128 and 168 are closed.Thus, in this case, the cleaning gas is supplied to the gas input portof the nozzle 47, and the inert gas is supplied to the gas input port ofthe nozzles 46, and 48 to 50. As a result, in this case, the inner wallof the nozzle 47 is cleaned, and the over-etching of the inner wall ofthe nozzles 46, and 48 to 50 is prevented.

When the cleaning object is switched to the nozzle 48 from this state,the air valve 164 is opened this time, and the air valves 162 to 163,and 165 to 166 are closed. Also, in this case, the air valves 127, 128,130, 131, 167, 168, 170, and 171 are opened, and the air valves 129 and169 are closed. Thus, in this case, the cleaning gas is supplied to thegas input port of the nozzle 48, and the inert gas is supplied to thegas input ports of the nozzles 46, 47, 49, and 50. As a result, in thiscase, the inner wall of the nozzle 48 is cleaned, and the over-etchingof the inner walls of the nozzles 46, 47, 49, and 50 is prevented.

In the same way hereunder, the inner wall of the nozzle 49 is cleaned,and the over-etching of the inner walls of the nozzles 46 to 48, and 50is prevented. Also, the inner wall of the nozzle 50 is cleaned, and theover-etching of the inner walls of the nozzles 46 to 49 is prevented.

Note that in the cleaning operation as described above, the flow rate ofthe cleaning gas per unit time supplied to the nozzles 46 to 50 iscontrolled by the MFC 185, based on an instruction of the controller240. Similarly, the flow rate of the inert gas per unite time suppliedto the nozzles 46 to 50 is controlled by the MFC 185, based on theinstruction of the controller 240.

In this case, the flow rate of the cleaning gasper unit time supplied tothe nozzles 46 to 50 is decided based on, for example, the length of aportion on which the reaction product is deposited. This is because thecleaning time for the nozzles 46 to 50 is set to be same. Thus, the flowrate of the cleaning gas per unit time supplied to the nozzles 46 to 50is largest in the nozzle 46, secondary largest in the nozzle 47, thirdlylargest in the nozzle 48, fourthly largest in the nozzle 49, andsmallest in the nozzle 50. Note that in cleaning the nozzles 46 to 50,the inert gas is supplied to five nozzles 41 to 45 from the piping parts105 to 109, respectively.

(2-3) Operation for Performing after-Purge Processing of the CleaningGas

Next, the operation for performing the after-purge processing of thecleaning gas will be explained.

In this case, air valves 126, 150, 148, 132 to 136, and 156 to 160 areopened, and other air valves 121 to 125, 127 to 131, 137 to 147, 149,and 151 to 155 are closed. Thus, the inert gas is supplied to the nozzle51 via the piping parts 67, 68 and 88. In this case, the flow rate ofthe inert gas per unit time supplied to the nozzle 51 is controlled bythe MFC 176, based on the instruction of the controller 240.

In addition, simultaneously with supplying the inert gas to the nozzle51, the inert gas is supplied to the nozzles 46 to 50 via the pipingparts 67 to 68, 99 to 103, and 94 to 98. In this case, the flow rate ofthe inert gas per unit timd supplied to the nozzles 46 to 50 iscontrolled by the MFC 176, based on the instruction of the controller240.

In addition at this time, vacuum exhaust processing is executed by avacuum exhaust device 246. As a result, residual gas remained in the gassupply system 232, in the processing chamber 201, and in the exhaustsystem 231 is removed to the outside of the exhaust system 231.

(2-4) Advantages

As described above, according to the second embodiment explained asdescribed above in detail, the following one or more advantages areprovided.

(1) According to this embodiment, the cleaning processing is applied tothe Si₃N₄ film deposited on a region opposed to the heater 206 out ofthe inner wall of the process tube 203 and the outer walls of thenozzles 41 to 44, and 46 to 49, by supplying the cleaning gas from thenozzle 51. Meanwhile, when the cleaning processing is applied to theSi3N4 film of small deposit amount compared to that on the inner wall ofthe process tube 203 deposited on the inner walls of the nozzles 46 to50, the cleaning gas is supplied to the entire body of the inner wallsof the nozzles 46 to 50. As a result, the cleaning processing can alsobe applied to the deposit of a different amount, without over-etching ofthe process tube and the nozzle, etc, thus making it possible to cleanthe entire body of the inner wall of the process tube, the outer wallsof the nozzles 41 to 44, and 46 to 49, and the inner walls of thenozzles 46 to 50.(2) Further, according to this embodiment, the inert gas is supplied tothe nozzle to which the cleaning gas is not supplied. Thus, theover-etching of the nozzles 46 to 50 can be prevented.(3) By cleaning the entire body of the inner walls of the nozzles 46 to50, and by preventing the over-etching of the nozzles 46 to 50, theservice life of the nozzles 46 to 50 can be extended. As a result, thereplacement cycle of the nozzles 46 to 50 can be extended. Specifically,when the replacement cycle of the nozzles 46 to 50 in a conventionaldevice is assumed to be 1 month, this replacement cycle can be extendedto 6 months in this embodiment. Thus, the number of times oftime-consuming replacement works (detaching and attaching works) can bereduced to ⅙ of the conventional number of times. As a result, theoperating rate of the device can be improved.(4) Further in addition, according to this embodiment, the flow rate ofthe cleaning gas per unit time supplied to the nozzles 46 to 50 isdecided based on, for example, the length of a part on which thereaction product is deposited. Thus, the same cleaning time required forthe inner walls of the nozzles 46 to 50 can be obtained. Thus, itbecomes possible to clean not only one nozzle out of the nozzles 46 to50 by sequentially selecting it one by one, but also a plurality ofnozzles out of the nozzles 46 to 50 by selecting them simultaneously.This contributes to shortening the cleaning time.

(3) Third Embodiment

In the processing chamber 202 according to this embodiment, as shown inFIG. 5, only the nozzle that supplies the first processing gas (DCS gas)is set as the multi-system nozzles. Namely, a different point of thethird embodiment from the first embodiment is that in the thirdembodiment, there is provided only the nozzle 50 as a nozzle forsupplying the second processing gas (NH₃ gas) into the processingchamber 201, and the nozzles 46 to 49 are not provided. The otherstructure is the same as that of the processing furnace 202 according tothe first embodiment.

Thus, in the film deposition processing according to this embodiment,only the first processing gas is supplied to the middle parts, and thesecond processing gas is not supplied to the middle parts. Namely,another different point of the third embodiment from the firstembodiment is that in the third embodiment, the second processing gas isnot supplied to the middle parts of the gas flow and the secondprocessing gas is supplied only to the upper stream side outside of thewafer arrangement region R, and is not supplied to the middle parts ofthe gas flow in a region where a plurality of wafers 200 are arranged(product wafer/monitor wafer arrangement region R₁).

In the third embodiment, as shown in FIG. 5, thermal decompositionoccurs between the first processing gas supplied from the nozzle 45 andthe second processing gas supplied from the nozzle 50, thereby allowingchemical reaction to occur between one element contained in the firstprocessing gas and one element contained in the second processing gas,and the amorphous material is formed, so that the thin film is formed onfirst to 25-th wafer 200 from mainly the upper stream side (lower sidein the processing chamber 201) of the gas flow. In addition, the thermalreaction occurs between the first processing gas supplied from thenozzle 43 and the second processing gas supplied from the nozzle 50,thus allowing the chemical reaction to occur between one elementcontained in the first processing gas and one element contained in thesecond processing gas, and the amorphous material is formed so that thethin film is formed on mainly the 26-th to 50-th wafer 200. Then,similarly, the thin film is formed on the 51-st to 75-th wafer 200 bythe first processing gas supplied from the nozzle 42 and the remainingsecond processing gas supplied from the nozzle 50, and the thin film isformed on the 76-th to 100-th wafer 200 by the first processing gassupplied from the nozzle 41 and the second processing gas supplied fromthe nozzle 50.

The other operation is the same as that of the film depositionprocessing according to the first embodiment.

By this embodiment also, the same advantage of that of the firstembodiment can be obtained. Particularly, FIG. 13 is a graph showing athickness distribution between wafers of the thin film formed by themethod of supplying the processing gas to the middle parts, and FIG. 13Ashows a film thickness distribution in a case that the DCS gas and theNH₃ gas are supplied to the middle parts, and only the DCS gas issupplied to the middle parts. Then, designation mark • shows the filmthickness distribution in a case that the DCS gas and the NH3 gas aresupplied to the middle parts, and designation mark Δ shows the filmthickness distribution in a case that only the DCS gas is supplied tothe middle parts. According to FIG. 13A, even in a case that only theDCS gas is supplied to the middle parts, it is found that the filmthickness between wafers 200 is uniform, in the same way as the case ofsupplying the DCS gas and the NH₃ gas to the middle parts. This isbecause since the film can not be generated by the second processing gas(NH₃ gas) singularly, the second processing gas is frequently remainedin a state of gas, compared to the first processing gas (DCS gas).Therefore, even if not compensating the second processing gas in themiddle, it is possible to improve the film thickness between wafers 200and the uniformity of the film quality.

In addition, FIG. 14 shows a distribution between wafers of a refractiveindex of the thin film when the thin film is formed by the method of notsupplying the processing gas to the middle parts (when the conventionalart is used), and a distribution between wafers of the refractive indexof the thin film when the thin film is formed by the method of supplyingthe processing gas to the middle parts. Note that in FIG. 14,designation mark □ shows a case of using the conventional art, anddesignation mark ⋄ shows a case that only the first processing gas (DCSgas) in the middle by using the multi-system nozzle, and designationmark Δ shows a case that both gases of the first processing gas (DCSgas) and the second processing gas (NH₃ gas) are supplied in the middleby using the multi-system nozzle. According to FIG. 14, it is found thateven in a case that only the DCS gas is supplied to the middle parts(designation mark ⋄, the difference in the refractive index is smallbetween wafers 200. In addition, when both gases of the NH₃ gas and theDCS gas are supplied to the middle parts, it is found that thedifference in the refractive index between wafers 200 is further small.Note that unless the refractive index is not uniform, it can be saidthat the composition rate is not uniform, either.

Note that in this embodiment, preferably the supply amount of the secondprocessing gas supplied to the upper stream side of the gas flow of thesecond processing gas is set more increased than a total flow amount ofthe supply amount of the first processing gas supplied to the upperstream side of the gas flow of the first processing gas and the supplyamount of the first processing gas supplied to the middle parts of thegas flow of the first processing gas. As described above, the Poly-Sifilm can be deposited by the first processing gas (DCS gas) by itself.This is because if a state (so-called NH₃ gas-rich state) is notcreated, in which a sufficient amount of the second processing gasexists in a region where the first processing gas is supplied, thePoly-Si film and an Si_(x)N_(x) film of different composition rate withlittle amount of element N is deposited on the main surface of the wafer200, thus making it impossible to form a desired Si₃N₄ film. Furtherpreferably, when the first processing gas is supplied in the middle to aplurality of places, the supply amount of the middle parts of theplurality of places on the lower stream side is made larger than that ofthe upper stream side. Thus, the difference in pressure on the upperstream side and the lower stream side of the gas flow can be corrected(made small).

(4) Fourth Embodiment

In the processing furnace 202 according to this embodiment, as shown inFIG. 6, only the nozzle for supplying the first processing gas (DCS gas)is set as the multi-system nozzle, and in addition, a supply place ofthe first processing gas is further increased. Namely, in thisembodiment, a different point from the first embodiment is that only thenozzle 50 is used without using the nozzles 46 to 49 as the nozzle forsupplying the second processing gas (NH₃ gas) to the middle parts, andthe nozzles 41 to 45, and 46 a to 49 a are used as the nozzle forsupplying the first processing gas to the processing chamber 201. Theother structure is the same as that of the processing furnace 202according to the first embodiment.

Here, tip end portions of the nozzles 41 to 44, and 46 a to 49 a arepositioned at the middle parts of the gas flow in a region where aplurality of wafers 200 loaded into the processing chamber 201 arearranged. Specifically, the tip end portion of each nozzles 41 to 44 ispositioned in a plurality of middle parts with mutually differentpositions (heights) provided along the gas flow. For example, each tipend portion of the nozzles 46 a to 49 a, and 41 to 44 is respectivelypositioned on approximately 88-th, 76-th, 63-th, 51-th, 39-th, 26-th,13-th, and first of 100 wafers counted from approximately the bottom(upper stream side of the gas flow).

Thus, in the film deposition processing according to this embodiment,the first processing gas is supplied to further plurality of middleparts, and the second processing gas is not supplied to the middleparts. Namely, in this embodiment, in supplying the first processing gasto the middle parts of the gas flow, the first processing gas issupplied to 8 middle parts. In addition, the second processing gas isnot supplied to the middle parts of the gas flow, and the secondprocessing gas is supplied only to the upper stream side outside of thewafer arrangement region R, and is not supplied to the middle parts ofthe gas flow in the region where a plurality of wafers 200 are arranged(product wafer/monitor wafer arrangement region R₁).

According to this embodiment, as shown in FIG. 13B, by furtherincreasing the supply parts of the first processing gas, the filmthickness between wafers 200 can be made further uniform. FIG. 13 is agraph showing the film thickness distribution between wafers of the thinfilm formed by the method of supplying the processing gas to the middleparts, and FIG. 13B shows the film thickness distribution when thesupply part of the DCS gas is further increased.

(5) Fifth Embodiment

In the processing furnace 202 according to this embodiment, as shown inFIG. 7, a different point from the first embodiment is that the nozzles46 to 49 for supplying the second processing gas (NH₃ gas) to the middleparts are respectively raised to be slightly lower (shorter) than thenozzles 41 to 44 for supplying the first processing gas (DCS gas) to themiddle parts. Note that in the first embodiment, the nozzles 41 to 44for supplying the first processing gas (DCS gas) to the middle parts areraised (extended) in a vertical direction (arrangement direction of thesubstrate), so as to be reach almost the same height (length)respectively, corresponding to the nozzles 46 to 49 for supplying thesecond processing gas (NH₃) gas to the middle parts.

Accordingly, in the film deposition processing according to thisembodiment, a different point from the film deposition processing isthat the second processing gas supplied to the middle parts in thesupply of the first processing gas to the middle parts of the gas flow,is supplied from the upper stream side of the gas flow more than thefirst processing gas supplied in the supply of the second processing gasto the middle parts of the gas flow. The other operation is the same asthe operation according to this embodiment.

According to this embodiment, the second processing gas (NH₃ gas) issupplied from slightly upper stream side more than the first processinggas (DCS gas). Therefore, a state (NH₃ gas-rich state) is easilycreated, in which a sufficient amount of NH₃ gas exists in advance in aregion within the processing chamber 201 to which the DCS gas issupplied. As a result, the reaction between the DCS gas and the NH₃ gasis accelerated, thus suppressing a phenomenon in which the Si_(x)N_(x)film and the Poly-Si film with different composition rate are depositedon the main surface of the wafer 200, making it easy to form a desiredSiN film.

According to this embodiment, an NH₃ gas rich state can be easilycreated without increasing the supply amount of the second processinggas, and this is preferable.

Further, according to this embodiment, the nozzles 46 to 49 forsupplying the second processing gas (NH3 gas) to the middle parts arerespectively raised to be slightly lower (upper stream side of the gasflow) than the nozzles 41 to 44 for supplying the first processing gas(DCS gas) to the middle parts. As a result, in the vicinity of the gassupply ports of the nozzles 46 to 49, the reaction between the firstprocessing gas and the second processing gas is suppressed, thus makingit possible to suppress the generation of particles.

(6) Sixth Embodiment

In the processing furnace 202 according to this embodiment, as shown inFIG. 8, the first gas supply nozzle for supplying the first processinggas into the processing chamber 201, and the second gas supply nozzlefor supplying the second processing gas into the processing chamber 201are arranged, so that nozzles with substantially same lengths (nozzles41 and 46, nozzles 42 and 47, nozzles 43 and 48, and nozzles 44 and 49)are adjacent to each other, and more preferably, are alternatelyarranged so as to be adjacent to each other. Namely, the nozzles withalmost the same heights (nozzles 41 and 46, nozzles 42 and 47, nozzles43 and 48, and nozzles 44 and 49) out of the nozzles 41 to 44 and thenozzles 46 to 49 are arranged so as to be adjacent to each other. Then,more preferably the first gas supply nozzles (nozzles 41 to 44) and thesecond gas supply nozzles (nozzles 46 to 49) are alternately arranged.Note that FIG. 8 is a block diagram showing the structure of the gassupply nozzle of the processing furnace constituting a part of thesubstrate processing apparatus of a sixth embodiment, and (a) shows aflat sectional view of the processing furnace, and (b) is a schematicview showing an arrangement of the gas supply nozzles in the processingfurnace.

According to this embodiment, the gas supply port of the first gassupply nozzle and the gas supply port of the second gas supply nozzleare adjacent to each other. Therefore, mixture of the gas flow can beaccelerated, thus making it possible to accelerate the reaction betweenthe first processing gas and the second processing gas.

(7) Seventh Embodiment

In the processing furnace 202 according to this embodiment, as shown inFIG. 9, the first gas supply nozzle and the second gas supply nozzle arearranged, so that the nozzles of substantially the same lengths areadjacent to each other, and more preferably arranged so that they arealternately adjacently arranged. Further, the gas supply port of thefirst gas supply nozzle is constituted so as to horizontally supply thefirst processing gas (DOS gas) toward the center of the wafer 200, andthe gas supply port of the second gas supply nozzle is constituted so asto supply the second processing gas (NH3 gas) toward the gas flow of thefirst processing gas directed toward the center of the wafer 200. Notethat FIG. 9 is a block diagram showing the structure of the gas supplynozzle of the processing furnace constituting a part of the substrateprocessing apparatus of a seventh embodiment, and (a) shows a flatsectional view of the processing furnace, and (b) shows a schematic viewshowing an arrangement of the gas supply nozzles in the processingfurnace.

According to this embodiment, the gas supply port of the first gassupply nozzle and the gas supply port of the second gas supply nozzleare adjacent to each other, and in addition, the second processing gasis supplied toward the gas flow of the first processing gas. Thiscontributes to further accelerating the mixture of the gas flow andfurther accelerating the reaction between the first processing gas andthe second processing gas.

(8) Eighth Embodiment

In the processing furnace 202 according to this embodiment, as shown inFIG. 10, the first gas supply nozzle and the second gas supply nozzleare arranged so that the nozzles of substantially the same lengths areadjacent to each other, and more preferably alternately arrange so as tobe adjacent to each other. Further, the second gas supply nozzle is madeshorter than the first gas supply nozzle. In addition, the NH₃ gas issupplied from the gas supply port of the second gas supply nozzle in avertical direction, and the DCS gas is supplied from the gas supply portof the first gas supply nozzle toward the gas flow of the NH₃ gas. Notethat FIG. 10 is a block diagram showing the structure of the gas supplynozzle of the processing furnace constituting a part of the substrateprocessing apparatus of an eighth embodiment, and FIG. 10A shows a flatsectional view of the processing furnace, and FIG. 10B is a schematicview showing the arrangement of the gas supply nozzles in the processingfurnace.

According to this embodiment, the gas supply port of the first gassupply nozzle and the gas supply port of the second gas supply nozzleare adjacent to each other, and in addition, the first processing gas(DCS gas) is supplied toward the gas flow of the second processing gas(NH₃ gas). This contributes to accelerating the mixture of the gas flowand further accelerating the reaction between the first processing gasand the second processing gas.

(9) Ninth Embodiment

In the processing furnace 202 according to this embodiment, as shown inFIG. 11, a different point from the first embodiment is that the firstgas supply nozzle is not constituted as the multi-system nozzle, but isconstituted as one porous nozzle 41′ having a plurality of gas supplyports provided at different positions in the vertical direction(arrangement direction of the substrates).

The porous nozzles 417 are raised (extended) inside of the processingchamber 201 in the vertical direction (arrangement direction of thesubstrates). In addition, the base end portions of the porous nozzles41′ are positioned outside of the side wall of the manifold 209, vianozzle through holes formed on the side wall of the manifold 209. Aplurality of gas supply ports are respectively provided in the porousnozzles 41′, inside of the wafer arrangement region R and at a pluralityof middle parts provided along the gas flow at mutually differentpositions. Preferably, the gas supply amount from the plurality of gassupply ports provided in the porous nozzles 41′ is set so as to beuniform between gas supply ports. For example, by providing the gassupply port so that a hole diameter of the gas supply port becomeslarger toward the lower stream side of the gas flow (upper side in theprocessing chamber 201), the gas supply amount can be made uniformbetween the gas supply ports.

According to this embodiment also, the same advantage as that of thefirst embodiment can be obtained. In addition, according to thisembodiment, the first gas supply nozzle is not constituted as themulti-system nozzle (a plurality of nozzles). Therefore, it is notnecessary to prepare a plurality of mass flow controllers and supplytubes for every plurality of nozzles constituting the multi-systemnozzle. This contributes to reducing a manufacturing cost of thesubstrate processing apparatus.

Note that the present invention is not limited to the above-describedembodiments. For example, the first gas supply nozzle may be constitutedas the multi-system nozzle, and the second gas supply nozzle may beconstituted as the porous nozzle. In addition, both of the first gassupply nozzle and the second gas supply nozzle may be constituted as theporous nozzles. Further, a plurality of porous nozzles may be providedfor every gas species of the processing gas. Further, only a part of thegas supply nozzles out of the plurality of gas supply nozzlesconstituting the multi-system nozzle may be summarized. In addition,more preferably, regarding the positions of the plurality of gas supplyports provided for each porous nozzle provided for every gas species ofthe processing gas, similarly to the gas output ports of theabove-described embodiments 1, 2, 5 to 7, the gas supply ports ofapproximately the same hole diameter may be disposed in approximatelythe same height of each of the plurality of porous nozzles, and the gassupply ports of one of the porous nozzles may be disposed slightly onthe upper stream side. This makes it possible to obtain the sameadvantage. In addition, preferably the tip end portion of the porousnozzle is closed and the plurality of gas supply ports are provided onthe side wall. Thus, gas amount supplied from each gas supply port iseasily uniformized.

(10) Tenth Embodiment

In the above-described embodiments, the DCS gas is used as the firstprocessing gas. However, the embodiment of the present invention is notlimited to the aforementioned embodiments. Namely, as the firstprocessing gas, for example, C1-based gas such as TCS(Tetrachlorosilane) gas, HCD (Hexachlorodisilane) gas, and Si-based gassuch as BTBAS (bis tertiar-butyl amino silane) can be used. Note thatthe chemical formula of TCS is SiCl₄, the chemical formula of HCD isSi₂Cl₆, and the chemical formula of BTBAS is SiH₂[NH(C₄H₉)]₂.

Note that when the TCS gas, the HCD gas, and the BTBAS gas are used asthe first processing gas, reaction conditions are for example set as 20to 400 cc of gas supply amount, 500 to 700° C. of main surfacetemperature of the wafer 200, and 20 to 100 Pa of the pressure in theprocessing chamber 201.

(11) Eleventh Embodiment

In the above-described embodiments, 100 wafers 200 are held by the boa217 in multiple stages, and the second gas supply nozzle and the fourthgas supply nozzle are respectively constituted as four multi-systemnozzles. However, the present invention is not limited to theabove-described embodiments. Namely, the number of wafers 200 held bythe boa 217 may be increased or decreased, and further the number ofmulti-system nozzles constituting the second gas supply nozzle or thefourth gas supply nozzle may be set as different number respectively.For example, when 125 wafers 200 are held in the boat 217 at aprescribed pitch (such as 6.3 mm) in multiple stages, and the number ofthe multi-system nozzles constituting the second gas supply nozzle orthe fourth gas supply nozzle is set as 9, the fluctuation of thethickness of the thin film formed between wafers 200 can be reduced to1% or less of the film thickness at maximum.

(12) Twelfth Embodiment

In the above-described embodiment, supply of the first processing gas tothe upper stream side of the gas flow, supply of the first processinggas to the middle part of the gas flow, supply of the second processinggas to the upper stream side of the gas flow, and supply of the secondprocessing gas to the middle part of the gas flow are simultaneouslyperformed. Namely, the first processing gas (DCS gas) or the secondprocessing gas (NH₃ gas) are simultaneously supplied into the processingchamber 201 from the nozzles 41 to 50.

However, a supply order of the gas in the present invention is notlimited to the above-described embodiments. Namely, each step is notexecuted simultaneously but may be sequentially executed according to aprescribed order. In addition, in the supply of the first processing gasto the middle part of the gas flow and the supply of the secondprocessing gas to the middle part of the gas flow, the processing gasmay be supplied from a plurality of multi-system nozzles simultaneously,or the processing gas may be supplied sequentially in a prescribed order(for example from the upper stream side of the gas flow).

For example, a start order or a stop order of each step may be decided,so that a supply time of the processing gas to the wafer 200, in whichthe thickness of the formed thin film becomes narrower, is made longerthan the supply time of the processing gas to other wafer 200. Under aloading effect phenomenon, the thickness of the thin film formed on thewafer 200 placed on the lower stream side of the gas flow (upper side inthe processing chamber 201) is likely to be narrower than the thicknessof the thin film formed on the wafer 200 placed on the upper stream sideof the gas flow (lower side in the processing chamber 201). In thiscase, preferably the gas supply to the lower stream side of the gas flowis started prior to the gas supply to the upper stream side or stoppedthereafter. Namely, the supply of the first processing gas to the middlepart of the gas flow and the supply of the second processing gas to themiddle part of the gas flow is started prior to executing the supply ofthe first processing gas to the upper stream side of the gas flow andthe supply of the second processing gas to the upper stream side orstopped thereafter. Further, in the supply of the first processing gasto a plurality of middle parts, at mutually different positions,provided along the gas flow (supply of the first processing gas atdifferent height positions in the processing chamber 201 in a substrateplacement region) and the supply of the second processing gas to theplurality of middle parts at mutually different positions, providedalong the gas flow (supply of the second processing gas at differentheight positions in the processing chamber 201 in the substrateplacement region), the supply time of the processing gas is preferablystarted prior to gas supply or stopped thereafter, so as to be longerthan the supply time of the processing gas to the wafer 200 placed onthe upper stream side. Thus, the uniformity of the film thicknessbetween wafers 200 can be made uniform.

In addition, for example, when the film thickness of the thin filmformed on the wafer 200 placed on the lower stream side of the gas flowis thinner than the thickness of the thin film formed on the wafer 200placed on the upper stream side, the start order or the stop order ofthe gas supply may be decided so that the gas capable of not creatingthe film by itself such as NH₃-rich state can be easily created. Namely,the gas supply may be started in an order of supply of the secondprocessing gas to the middle part of the gas flow→supply of the firstprocessing gas to the middle part of the gas flow→supply of the secondprocessing gas to the upper stream side of the gas flow→supply of thefirst processing gas to the upper stream side of the gas flow, or thegas supply may be stopped in an order opposite to the above-describedorder. Further, in the supply of the first processing gas to the middlepart of the gas flow and the supply of the second processing gas to themiddle part of the gas flow, the start order or the stop order of thegas supply may be decided, so that the NH₃ gas-rich state can be easilycreated in each region. Namely, in the supply of the first processinggas to a plurality of middle parts at mutually different positions,provided along the gas flow and the supply of the second processing gasto the plurality of middle parts at mutually different positions,provided along the gas flow, preferably the supply of the gas is startedinto the processing chamber 201 and the gas supply into the processingchamber 201 is stopped, in an order of, for example, nozzle 49→nozzle44→nozzle 48→nozzle 43→nozzle 47→nozzle 42→nozzle 46→nozzle 41. Thus,the reaction between the DCS gas and the NH₃ gas can be accelerated, thephenomenon, in which the Si_(x)N_(x) film or the Poly-Si film withdifferent composition ratio is deposited on the main surface of thewafer 200, can be suppressed, and a desired Si₃N₄ film can easilyformed.

(13) Thirteenth Embodiment

In the processing furnace according to this embodiment, as shown in FIG.16, the second gas supply nozzle for supplying the second processing gasis disposed between the first gas supply nozzles for supplying the firstprocessing gas. Preferably, the second gas supply nozzle for supplyingthe second processing gas is disposed at approximately the centralposition between the first gas supply nozzles for supplying the firstprocessing gas. Thus, the mixture of the gas can be accelerated.

(14) Fourteenth Embodiment

In the aforementioned embodiment, the process tube 203 as the reactiontube is constituted as a double tube of the inner tube 204 as an innerreaction tube and the outer tube 205 as an outer reaction tube providedoutside of the inner tube 204. However, the present invention is notlimited to the aforementioned embodiments. Namely, the process tube 203may be constituted as a single tube not having the inner tube 204.

(15) Other Embodiment

As described above, various embodiments of the present invention havebeen explained. However, the present invention is not limited to theaforementioned embodiments. For example, preferred aspects of thepresent invention are as follows.

A first aspect provides a manufacturing method of a semiconductor deviceincluding the steps of:

loading a plurality of substrates into a processing chamber;

supplying a first processing gas containing at least one element out ofa plurality of elements constituting a thin film formed on a mainsurface of the substrate and capable of depositing a film by itself, toan upper stream side of a gas flow outside of a region where theplurality of substrates loaded into the processing chamber are arranged,supplying a second processing gas containing at least one element out ofthe plurality of elements and not capable of depositing the film byitself, to the upper stream side of the gas flow outside of the regionwhere the plurality of substrates loaded into the processing chamber arearranged, supplying the first processing gas to a middle part of the gasflow within the region where the plurality of substrates loaded into theprocessing chamber are arranged, and forming an amorphous material byallowing the first processing gas and the second processing gas to reactwith each other in the processing chamber, and forming the thin film onthe main surfaces of the plurality of substrates; and

unloading the substrate after forming the thin film from the processingchamber.

A second aspect provides the manufacturing method of the semiconductordevice according to the first aspect, wherein supply of the firstprocessing gas to the middle part of the gas flow includes the supply ofthe first processing to a plurality of middle parts provided along thegas flow at mutually different positions, in a region where theplurality of substrates loaded into the processing chamber are arranged.

A third aspect provides the manufacturing method of the semiconductordevice according to the first or second aspect, further including thesupply of the second processing gas to the middle part of the gas flowin the region where the plurality of substrates loaded into theprocessing chamber are arranged.

A fourth aspect provides the manufacturing method of the semiconductordevice according to the second aspect, further including the supply ofthe second processing gas to the middle part of the gas flow in theregion where the plurality of substrates loaded into the processingchamber are arranged, and the supply of the second processing gas to themiddle part of the gas flow includes the supply of the second processinggas to a plurality of middle parts provided along the gas flow atmutually different positions, in the region where the plurality ofsubstrates loaded into the processing chamber are arranged.

A fifth aspect provides the manufacturing method of the semiconductordevice according to the third aspect, wherein the supply of the secondprocessing gas to the middle part of the gas flow includes the supply ofthe second processing gas to the middle part of the gas flow provided atsubstantially the same position as the middle part to which the firstprocessing gas is supplied.

A sixth aspect provides the manufacturing method of the semiconductordevice according to the third aspect, wherein the supply of the secondprocessing gas to the middle part of the gas flow includes the supply ofthe second processing gas to the middle part of the gas flow provided onan upper stream side of the gas flow beyond the middle part, in adjacentto the middle part to which the first processing gas is supplied.

A seventh aspect provides the manufacturing method of the semiconductordevice according to the first aspect, wherein in the step of forming thethin film, a temperature of main surfaces of the plurality of substratesloaded into the processing chamber is increased to a temperature atwhich at least both of the first processing gas and the secondprocessing gas are thermally decomposed, and the temperature of the mainsurface between the plurality of substrates is maintained to besubstantially uniform over an overall region where the plurality ofsubstrates are arranged.

An eighth aspect provides the manufacturing method of the semiconductordevice according to the third aspect, wherein in the step of forming thethin film, a temperature of main surfaces of the plurality of substratesloaded into the processing chamber is increased to a temperature atwhich at least both of the first processing gas and the secondprocessing gas are thermally decomposed, and the temperature of the mainsurface between the plurality of substrates are maintained to besubstantially uniform over an overall region where the plurality ofsubstrates are arranged.

A ninth aspect provides the manufacturing method of the semiconductordevice according to the first aspect, wherein in the supply of the firstprocessing gas to an upper stream side of the gas flow, the firstprocessing gas is supplied into the processing chamber while controllinga gas flow rate, and in the supply of the first processing gas to themiddle part of the gas flow, the first processing gas is supplied from asecond gas supply part into the processing chamber while controlling agas flow amount independently of a control of a gas flow amount in thefirst gas supply part.

A tenth aspect provides the manufacturing method of the semiconductordevice according to the third aspect, wherein in the supply of thesecond processing gas to the upper stream side of the gas flow, thesecond processing gas is supplied from a third gas supply part into theprocessing chamber while controlling the gas flow amount, and in thesupply of the second processing gas to the middle part of the gas flow,the first processing gas is supplied into the processing chamber from afourth gas supply part, wile controlling a gas flow amount independentlyof a control of a gas flow amount in the third gas supply part.

An eleventh aspect provides the manufacturing method of thesemiconductor device according to the first aspect, wherein in the stepof forming the thin film, the plurality of substrates loaded into theprocessing chamber are arranged in a horizontal posture, with spacedapart from each other in multiple stages.

A twelfth aspect provides the manufacturing method of the semiconductordevice according to the first aspect, wherein the first processing gasis a gas containing a silicon element, and the second processing gas isa gas containing a nitrogen element or an oxygen element, and the thinfilm is a thin film formed of an amorphous material containing thesilicon element and the nitrogen element or the thin film formed of theamorphous material containing the silicon element and the oxygenelement.

A thirteenth aspect provides the manufacturing method of thesemiconductor device according to the first aspect, wherein the firstprocessing gas is a gas containing a chlorine element, and the secondprocessing gas is a gas containing a nitrogen element or an oxygenelement.

A fourteenth aspect provides the manufacturing method of thesemiconductor device according to the twelfth aspect, wherein the firstprocessing gas is a gas of any one of TCS, HOD, and BTBAS, and thesecond processing gas is an NH₃ gas.

A fifteenth aspect provides the manufacturing method of thesemiconductor device according to the first aspect, wherein in thesupply of the first processing gas to the middle part of the gas flow,the first processing gas is supplied via a nozzle, and the nozzle allowsthe gas to flow to the middle part in a region where the plurality ofsubstrates loaded into the processing chamber are arranged, from anupper stream side of the gas flow outside of the region where theplurality of substrates loaded into the processing chamber are arranged.

A sixteenth aspect provides the manufacturing method of thesemiconductor device according to the second aspect, wherein in thesupply of the first processing gas to the middle part of the gas flow,the first processing gas is supplied via a plurality of nozzles withmutually different lengths, and the plurality of nozzles with differentlengths allow the gas to flow from an upper stream side of the gas flowoutside of the region where the plurality of substrates loaded into theprocessing chamber are arranged, to a plurality of middle parts atmutually different positions, provided along the gas flow in a regionwhere the plurality of substrates loaded into the processing chamber arearranged.

A seventeenth aspect provides the manufacturing method of thesemiconductor device according to the third aspect, wherein in thesupply of the second processing gas to the middle part, the secondprocessing gas is supplied via a nozzle, and the nozzle allows the gasto flow to the middle part in a region where the plurality of substratesloaded into the processing chamber are arranged, from an upper streamside of the gas flow outside of the region where the plurality ofsubstrates loaded into the processing chamber are arranged.

An eighteenth aspect provides the manufacturing method of thesemiconductor device according to the fourth aspect, wherein in thesupply of the second processing gas to the middle part of the gas flow,the second processing gas is supplied via a plurality of nozzles withmutually different lengths, and the plurality of nozzles with differentlengths allow the gas to flow to a plurality of middle parts, atmutually different positions, provided along the gas flow in a regionwhere the plurality of substrates loaded into the processing chamber arearranged, from an upper stream side of the gas flow outside of theregion where the plurality of substrates loaded into the processingchamber are arranged.

A nineteenth aspect provides the manufacturing method of thesemiconductor device according to the third embodiment, wherein in thesupply of the second processing gas to the middle part of the gas flow,the second processing gas is supplied to join the gas flow of the firstprocessing gas in the supply of the first processing gas to the middlepart of the gas flow.

A twentieth aspect provides the manufacturing method of thesemiconductor device according to the nineteenth aspect, wherein in thesupply of the first processing gas to the middle part of the gas flow,the first processing gas is supplied toward a center of main surfaces ofthe plurality of substrates loaded into the processing chamber.

A twenty-first aspect provides the manufacturing method of thesemiconductor device according to the fourth aspect, wherein in thesupply of the first processing gas to the middle part of the gas flow,the first processing gas is supplied via first plurality of nozzles withmutually different lengths, and in the supply of the second processinggas to the middle part of the gas flow, the second processing gas issupplied via second plurality of nozzles with mutually differentlengths, with nozzles of the first plurality of nozzles havingsubstantially same lengths being arranged so as to be adjacent to eachother.

A twenty-second aspect provides the manufacturing method of thesemiconductor device according to the first aspect, wherein the step offorming the thin film includes the step of causing the first processinggas and the second processing gas supplied to an upper stream side ofthe gas flow outside of the region where the plurality of substrates arearranged, to react with each other to form an amorphous material, andforming the thin film on the main surfaces of the plurality ofsubstrates; and the step of causing the first processing gas and thesecond processing gas supplied to the middle part in a region where theplurality of substrates loaded into the processing chamber are arranged,to react with each other, to form an amorphous material, and forming thethin film on the main surfaces of the plurality of substrates on a lowerstream side beyond the middle part to which the first processing gas issupplied.

A twenty-third aspect provides the manufacturing method of thesemiconductor device according to the third aspect, wherein the step offorming the thin film includes the step of causing the first processinggas supplied to the upper stream side of the gas flow outside of theregion where the plurality of substrates loaded into the processingchamber are arranged, and the second processing gas supplied to theupper stream side of the gas flow, to react with each other to form anamorphous material; and the step of causing the first processing gassupplied to the middle part and the second processing gas supplied tothe middle part, to react with each other to form the amorphousmaterial, and forming the thin film on the plurality of substrates onthe lower stream side beyond the middle part to which the firstprocessing gas is supplied.

A twenty-fourth aspect provides a manufacturing method of asemiconductor device including the step of loading a plurality ofsubstrates into a processing chamber; supplying ammonia-based gas ornitrogen oxide gas to an upper stream side of a gas flow outside of aregion where the plurality of substrates loaded into the processingchamber are arranged, while supplying a gas containing silane-based gasto a middle part on an upper stream side of the gas flow outside of theregion where the plurality of substrates loaded into the processingchamber are arranged and a middle part in a region where the pluralityof substrates loaded into the processing chamber are arranged, thencausing the gas containing the siline-based gas and the ammonia-basedgas or the nitrogen oxide gas to react with one another, thereby forminga thin film on main surfaces of the plurality of substrates.

A twenty-fifth aspect provides the manufacturing method of thesemiconductor device according to the first aspect, wherein a supplyamount of the second processing gas to the upper stream side is largerthan a total amount of a supply amount of the first processing gassupplied to the upper stream side of the gas flow and a supply amount ofthe first processing gas supplied to the middle part of the gas flow.

A twenty-sixth aspect provides the manufacturing method of thesemiconductor device according to the third aspect, wherein a supplyamount of a gas supplied to a middle part of a gas flow of the firstprocessing gas to a supply amount of a gas supplied to the upper streamside of a gas flow of the first processing gas, and a supply amount of agas supplied to the middle part of the gas flow of the second processinggas to a supply amount of a gas supplied to the upper stream side of thegas flow of the second processing gas, are substantially same.

A twenty-seventh aspect provides a substrate processing apparatus,having

a processing chamber that forms a thin film on a main surface of aplurality of substrates;

a heater provided outside of the processing chamber, for heating aninside of the processing chamber;

a first gas supply part containing at least one element of a pluralityof elements constituting the thin film formed on the main surface of thesubstrate, for supplying a first processing gas capable of depositing afilm by itself to a gas flow outside of a region where the plurality ofsubstrates loaded into the processing chamber are arranged, which is aregion not opposed to the heater in the processing chamber;

a second gas supply part provided independently of the first gas supplypart, for supplying the first processing gas to a middle part of a gasflow in a region where the plurality of substrates loaded into theprocessing chamber are arranged, which is a region opposed to the heaterin the processing chamber;

a third gas supply part that supplies a second processing gas containingat least other one element of the plurality of elements and not capableof depositing the film by itself, to an upper stream side of the gasflow outside of the region where the plurality of substrates loaded intothe processing chamber are arranged, which is the region not opposed tothe heater in the processing chamber;

an exhaust part provided on a lower stream side of the gas flow outsideof the region where the plurality of substrates loaded into theprocessing chamber are arranged, which is the region not opposed to theheater in the processing chamber; and

a controller that controls so as to cause the first processing gas andthe second processing gas to react with each other in the processingchamber to form an amorphous material, and form a thin film of theplurality of substrates.

A twenty-eighth aspect provides the substrate processing apparatusaccording to the twenty-seventh aspect, wherein the second gas supplypart has a plurality of first gas supply nozzles with mutually differentlengths, and the first gas supply nozzles are respectively extended froman upper stream side of the gas flow outside of the region where theplurality of substrates loaded into the processing chamber are arranged,up to a plurality of middle parts of mutually different positions,provided along the gas flow in a region where the plurality of substrateloaded into the processing chamber are arranged.

A twenty-ninth aspect provides the substrate processing apparatusaccording to the twenty-seventy or twenty-eighth aspect, further havinga fourth gas supply part that supplies the second processing gas to themiddle part of the gas flow in a region where the plurality ofsubstrates loaded into the processing chamber are arranged, which is theregion opposed to the heater in the processing chamber.

A thirtieth aspect provides the substrate processing apparatus accordingto the twenty-eighth aspect, further including the fourth gas supplypart that supplies the second processing gas to the middle part of thegas flow in a region where the plurality of substrates loaded into theprocessing chamber are arranged, which is the region opposed to theheater in the processing chamber, wherein the fourth gas supply part hasa plurality of gas supply nozzles with mutually different lengths, andthe second gas supply nozzles are respectively extended to a pluralityof middle parts provided along the gas flow at mutually differentpositions in a region where the plurality of substrates are loaded intothe processing chamber, from an upper stream side of the gas flowoutside of the region where the plurality of substrates loaded into theprocessing chamber are arranged.

A thirty-first aspect provides the substrate processing apparatus,further having a temperature controller that controls the heater, sothat a main surface temperature of the plurality of substrates loadedinto the processing chamber is increased up to a temperature at which atleast both of the first processing gas and the second processing gas arethermally decomposed, and the main surface temperature between theplurality of substrates is maintained to be substantially equal to eachother over an overall region where the plurality of substrates arearranged.

A thirty-second aspect provides the substrate processing apparatusaccording to the thirtieth aspect, wherein the first gas supply nozzleand the second gas supply nozzle are arranged, so that the nozzles ofsubstantially same lengths are adjacent to each other.

A thirty-third aspect provides a manufacturing method of a semiconductordevice, including the steps of:

loading a plurality of substrates into a processing chamber;

supplying a first processing gas from a first gas supply part to anupper stream side of a gas flow outside of a region where the pluralityof substrates loaded into the processing chamber are arranged;

supplying the first processing gas to middle parts corresponding to aregion where the plurality of substrates loaded into the processingchamber are arranged, from a second gas supply part providedindependently of the first gas supply part;

supplying from a third gas supply part a second processing gas of gasspecies different from the first processing gas, to an upper stream sideof the gas flow outside of the region where the plurality of substratesloaded into the processing chamber are arranged;

supplying the second processing gas form a fourth gas supply partindependent of the third gas supply part, to approximately the samemiddle part as the middle part for supplying the first processing gasfrom the second gas supply part;

causing the first processing gas and the second processing gas in theprocessing chamber to react with each other, to process the plurality ofsubstrates; and

unloading an already processed substrate form the processing chamber.

According to the thirty-third aspect, each processing gas is suppliedfrom the middle part in addition to the upper stream side of the gasflow. Therefore, the processing gas can be uniformly supplied to aplurality of substrates, and the film can be uniformly deposited on theplurality of substrates. Accordingly, excellent film depositioncharacteristics can be realized on the substrate, namely, highproductivity can be realized, while maintaining uniformity in filmthickness between substrates and in-surface of the substrate.

A thirty-fourth aspect provides a manufacturing method of asemiconductor device, including the steps of:

loading a plurality of substrates into a processing chamber;

supplying from a first gas supply part a first processing gas to anupper stream side of a gas flow outside of a region where the pluralityof substrates loaded into the processing chamber are arranged, whilecontrolling a gas flow amount;

supplying the first processing gas to a middle part corresponding to aregion where the plurality of substrates loaded into the processingchamber are arranged, from a second gas supply part providedindependently of the first gas supply part, while controlling the gasflow amount independently of control of a gas flow amount by the firstgas supply part;

supplying from a third gas supply part a second processing gas of gasspecies different from the first processing gas, to the upper streamside of the gas flow outside of the region where the plurality ofsubstrates loaded into the processing chamber are arranged, whilecontrolling the gas flow amount;

supplying the second processing gas from a fourth gas supply partprovided independently of the third gas supply part, to approximatelythe same middle part as the middle part for supplying the firstprocessing gas from the second gas supply part, while controlling thegas flow amount independently of the control of the gas flow amount bythe third gas supply part;

causing the first processing gas and the second processing gas to reactwith each other in the processing chamber, to process the plurality ofsubstrates; and

unloading an already processed substrate from the processing chamber.

According to the thirty-fourth aspect, each processing gas is suppliedwhile controlling the gas flow independently of the middle part inaddition to the upper stream side of the gas flow. Therefore, theprocessing gas can be more uniformly supplied to the plurality ofsubstrates, and the film can be uniformly deposited on the plurality ofsubstrates. Accordingly, further higher productivity can be realized,while maintaining the excellent film deposition characteristics on thesubstrate.

A thirty-fifth aspect provides a substrate processing apparatus, having:

a processing chamber that processes a plurality of substrates;

a holder that holds the plurality of substrates in the processingchamber;

a first gas supply part that supplies a first processing gas to asubstrate from an upper stream side of a gas flow outside of a regionwhere the plurality of substrates are arranged;

a second gas supply part provided independently of the first gas supplypart, for supplying the first processing gas to the substrate from amiddle part corresponding to the region where the plurality ofsubstrates are arranged;

a third gas supply part that supplies a second processing gas of gasspecies different from the first processing gas, to the substrate fromthe upper stream side of the gas flow outside of the region where theplurality of substrates are arranged;

a fourth gas supply part provided independently of the third gas supplypart, for supplying the second processing gas to the substrate fromapproximately the same middle part as the middle part for supplying thefirst processing gas by the second gas supply part; and

an exhaust part that exhausts an inside of the processing chamber form alower stream side of the plurality of substrates.

According to the thirty-fifth aspect, in addition to the first and thirdgas supply parts for supplying each processing gas from the upper streamside of the gas flow, the second and fourth gas supply parts areprovided for supplying each processing gas from the middle part also.Therefore, the processing gas can be uniformly supplied to the pluralityof substrates, and the film can be deposited uniformly on the pluralityof substrates. Accordingly, the excellent film depositioncharacteristics can be realized on the substrate, namely, highproductivity can be realized between substrates and in-surface of thesubstrate, while maintaining the uniformity in film thickness.

A thirty-sixth aspect provides a substrate processing apparatus, having:

a processing chamber that processes a plurality of substrates;

a holder that holds the plurality of substrates in the processingchamber;

a first gas supply part that supplies a first processing gas to asubstrate form an upper stream side of a gas flow outside of a regionwhere the plurality of substrates are arranged;

a second gas supply part provided independently of the first gas supplypart, for supplying the first processing gas to the substrate form amiddle part corresponding to the region where the plurality ofsubstrates are arranged;

a third gas supply part that supplies a second processing gas of gasspecies different from the first processing gas, to the substrate fromthe upper stream side of the gas flow outside of the region where theplurality of substrates are arranged;

a fourth gas supply part provided independently of the third gas supplypart, for supplying the second processing gas to the substrate fromapproximately the same middle part as the middle part for supplying thefirst processing gas by the second gas supply part; and

an exhaust part that exhausts an inside of the processing chamber from alower stream side of the plurality of substrates.

According to the thirty-fifth aspect, in addition to the first and thirdgas supply parts for supplying each processing gas from the upper streamside of the gas flow, the second and fourth gas supply parts areprovided for supplying each processing gas from the middle part also.Therefore, the processing gas can be uniformly supplied to the pluralityof substrates, and the film can be uniformly deposited on the pluralityof substrates. Accordingly, the excellent film depositioncharacteristics can be realized on the substrate, namely highproductivity can be realized between substrates and in-surface of thesubstrate, while maintaining the uniformity in film thickness.

A thirty-sixth aspect provides a substrate processing apparatus, having:

a processing chamber that processes a plurality of substrates;

a holder that holds the plurality of substrates in the processingchamber;

a first gas supply part that supplies a first processing gas to asubstrate from an upper stream side of a gas flow outside of a regionwhere the plurality of substrates are arranged while controlling a gasflow amount of a first processing gas;

a second gas supply part provided independently of the first gas supplypart, for supplying the first processing gas to the substrate from themiddle part corresponding to the region where the plurality ofsubstrates are arranged while controlling the gas flow amountindependently of the control of the gas flow amount by the first gassupply part;

a third gas supply part that supplies from the upper stream side of theplurality of substrates, a second processing gas of gas speciesdifferent from the first processing gas, to the substrate from the upperstream side outside of the region where the plurality of substrates arearranged;

a fourth gas supply part provided independently of the third gas supplypart, for supplying the second processing gas to the substrate fromapproximately the same middle part as the middle part for supplying thefirst processing gas by the second gas supply part, while controlling agas flow amount independently of a control of the gas flow amount by thethird gas supply part; and

an exhaust part that exhausts an inside of the processing chamber form alower stream side of the plurality of substrates.

According to the thirty-sixth aspect, in addition to the first and thirdgas supply parts for supplying from the upper stream side of the gasflow each processing gas while controlling the gas flow amount, thesecond and fourth gas supply parts are provided for supplying eachprocessing gas while controlling the gas flow amount independently ofthe middle part also. Therefore, the processing gas can be furtheruniformly supplied to the plurality of substrates, and the film can befurther uniformly deposited on the plurality of substrates. Accordingly,further high productivity can be realized while maintaining theexcellent film deposition characteristics on the substrate.

A thirty-seventh aspect provides the substrate processing apparatusaccording to the thirty-fifth or thirty-sixth aspect, wherein the secondgas supply part is independently provided respectively, including aplurality of first gas supply nozzles for supplying the first processinggas to the substrate from each different middle part corresponding to anarea where the plurality of substrates are arranged, and further thefourth gas supply part is independently provided respectively, includinga plurality of second gas supply nozzles for supplying the secondprocessing gas to the substrate from the different middle part andapproximately the same middle part for supplying the first processinggas.

According to the thirty-seventh aspect, the second gas supply partincludes a plurality of first gas supply nozzles for supplying the firstprocessing gas from the different middle part, and the fourth gas supplypart includes a plurality of gas supply nozzles for supplying the secondprocessing gas to the different middle part. Therefore, the processinggas can be uniformly supplied to a plurality of substrates, and the filmcan be uniformly deposited on the plurality of substrates. Accordingly,further higher productivity can be realized, while maintaining theexcellent film deposition characteristics on the substrate.

A thirty-eighth aspect provides the substrate processing apparatusaccording to the thirty-fifth to thirty-seventh aspect, wherein acleaning gas supply part for supplying cleaning gas into the second gassupply part is connected to the second gas supply part.

According to the thirty-eighth aspect, the cleaning gas supply part isconnected to the second gas supply part. Therefore, by supplying thecleaning gas into the second gas supply part, the inside of the secondgas supply part can be cleaned. Thus, the service life of the second gassupply part can be extended. As a result, a replacement period of thesecond gas supply part can be extended. Thus, the number of times of areplacement work of the second gas supply part can be reduced. As aresult, an operation rate of the device can be improved.

A thirty-ninth aspect provides the manufacturing method of thesemiconductor device according to the thirty-third or thirty-fourthaspect, wherein the second processing gas is a dichlorsilane (DCS) gas.

A forty-first aspect provides the manufacturing method of thesemiconductor device according to the thirty-third or thirty-fourthaspect, wherein a nitride silicon film is formed on the alreadyprocessed substrate.

A forty-second aspect provides the substrate processing apparatusaccording to the thirty-seventh aspect, wherein the first gas supplynozzle and the second gas supply nozzle are respectively two or more.

(16) Further Other Embodiment

(1) For example, in the above-described embodiments, explanation hasbeen given to a case that the flow rate per unit time of the cleaninggas supplied to the nozzles 41 to 45, or nozzles 46 to 50 is set to be adifferent value, and the cleaning time is set to be same. However, inthe present invention, the flow rate per unit time may be set to be sameand the cleaning time may be set to be different. In addition, in thepresent invention, both of the flow rate per unit time and the cleaningtime may be set to be different.

(2) Further, in the above-described embodiments, when the cleaning gasis supplied to the nozzles 41 to 45, or nozzles 46 to 50, explanationhas been given to a case that they are selected one by one in accordancewith a previously defined order, and the cleaning gas is supplied to theselected nozzle. However, in the present invention, a plurality of suchnozzles are selected so as to be fewer than a total number, and thecleaning gas may be supplied to the selected plurality of nozzles. Inaddition, in the present invention, the cleaning gas may be supplied toall nozzles simultaneously. For example, in the cleaning processing ofthe nozzles 41 to 45, and nozzles 46 to 50, explanation has been givento a case that the flow rate per unit time of the cleaning gas suppliedto the nozzles 41 to 45, and nozzles 46 to 50 is controlled by theMFC183 and MFC184, respectively. However, the present invention is notlimited thereto, and for example it may be so constituted that insteadof the MFC183 and MFC184, the MFC is provided in the piping parts 83 to87 and piping parts 110 to 115, respectively and based on an instructionof the controller 240, the flow rate per unit time of the cleaning gasmay be controlled. Thus, the cleaning processing of the nozzles 41 to 50can be simultaneously performed, and this is advantageous in terms ofproductivity.

(3) Further, in the above-described embodiments, explanation has beengiven to a case that the cleaning processing of the inner walls of thenozzles 46 to 50 is performed simultaneously with the cleaningprocessing of the inner walls, etc, of the process tube 203. Thus, whenthe inner wall, etc, of the process tube 203 and the inner walls of thenozzles 41 to 44 are simultaneously cleaned, an overall time requiredfor cleaning the device is reduced, and this is advantageous in terms ofthe productivity. However, in the present invention, they can beseparately performed. In this case, when there is no problem in theinvasion of the cleaning gas outputted from the nozzle under cleaninginto other nozzles, the inert gas can be supplied only to the nozzlethat has just undergone the cleaning processing. Thus, a use amount ofthe inert gas can be reduced.

Particularly, when an Si₃N₄ film explained in the above-describedembodiments is deposited on the wafer 200, the Si₃N₄ film is depositedon the inner wall, etc, of the process tube 203, and the Poly-Si film ismainly deposited on the inner walls of the nozzles 41 to 44. Therefore,when the cleaning processing is performed by changing the frequency ofthe cleaning processing to the inner wall, etc, of the process tube 203and the cleaning processing to the inner walls of the nozzles 41 to 44,respectively, this is effective in controlling to suppress thegeneration of particles.

In addition, although a small deposit amount, the Si₃N₄ film is mainlydeposited on the inner wall of the nozzles 46 to 49, and although asmall deposit amount, the NH₄C1 film is mainly deposited on the innerwall of the nozzle 50. Therefore, when the cleaning processing isperformed by changing the frequency of the cleaning processing to theinner wall, etc, of the process tube 203, the cleaning processing to theinner walls of the nozzles 41 to 44, the cleaning processing to theinner walls of the nozzles 46 to 49, and the cleaning processing to theinner walls of the nozzles 45 and 50 are performed, respectively, thisis effective in controlling to suppress the generation of particles. Forexample, the frequency of the cleaning processing to the inner walls ofthe nozzles 46 to 49 and the cleaning processing to the inner walls ofthe nozzles 45 and 50 is set to be fewer than the cleaning processing tothe inner wall, etc, of the process tube 203 and the cleaning processingto the inner walls of the nozzles 41 to 44.

(4) In the above-described embodiments, the nozzle 44 and the nozzle 49are respectively positioned to approximately first wafer that exists inthe product wafer/monitor arrangement region R₁. However, in a case ofexcellent substrate in-surface uniformity, substrate inter-surfaceuniformity, and a quality of the film of the first to 25-th waferscounted from the bottom of the product wafer/monitor wafer deposited bythe supply of the gas from the nozzles 45 and the nozzle 50 that stopson the upper stream side of the gas flow outside of the waferarrangement region R, the nozzle 44 and the nozzle 49 may not beprovided. Moreover, when the nozzle 45 and the nozzle 50 are stopped onthe upper stream side of the gas flow outside of the wafer arrangementregion R, they may be inserted and raised from the bottom in theprocessing furnace 202.

(5) Further, the present invention can be applied not only to thevertical type CVD apparatus, but also to a horizontal type CVDapparatus. Further, the present invention can be applied not only to abatch CVD apparatus, but also to a sheet-feeding type CVD apparatus.Further in addition, the present invention can be applied not only to alow pressure type CVD apparatus, but also to a normal pressure type CVDapparatus. In addition, the present invention can also be applied to awafer processing apparatus other than the CVD apparatus. Namely, thepresent invention can be applied to the wafer processing apparatus ingeneral that applies a prescribed processing to wafers by using achemical reaction in a reaction space. Moreover, the present inventioncan also be applied to the substrate processing apparatus other than thewafer processing apparatus. For example, the present invention can alsobe applied to a glass substrate processing apparatus that applies aprescribed processing to a glass substrate of a liquid crystal device.

A point is that by applying a prescribed processing to the substrate ofa solid device, the present invention can be applied to the substrateprocessing apparatus in general, in which the reaction product isdeposited on the inner wall of the processing gas output means such as anozzle.

(5) It is a matter of course that the present invention can be variouslymodified and executed in the scope not departing from the gist of theinvention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram showing a gas supply system of a processingfurnace constituting a part of a substrate processing apparatusaccording to a first embodiment of the present invention.

FIG. 2 is a block diagram showing the gas supply system of theprocessing furnace constituting apart of the substrate processingapparatus according to a second embodiment of the present invention.

FIG. 3 is a schematic block diagram of the processing furnaceconstituting a part of the substrate processing apparatus according tothe first embodiment of the present invention.

FIG. 4 is a schematic block diagram of a processing furnace constitutinga part of the substrate processing apparatus of a conventional example.

FIG. 5 is a block diagram showing a structure of the gas supply nozzleof the processing furnace constituting a part of the substrateprocessing apparatus according to a third embodiment of the presentinvention.

FIG. 6 is a block diagram showing the structure of the gas supply nozzleof the processing furnace constituting a part of the substrateprocessing apparatus according to a fourth embodiment of the presentinvention.

FIG. 7 is a block diagram showing the structure of the gas supply nozzleof the processing furnace constituting a part of the substrateprocessing apparatus according to a fifth embodiment of the presentinvention.

FIG. 8 is a block diagram showing the structure of the gas supply nozzleof the processing furnace constituting a part of the substrateprocessing apparatus according to a sixth embodiment, (a) shows a flatsectional view of the processing furnace, and (b) is a schematic viewshowing an arrangement of the gas supply nozzle in the processingfurnace.

FIG. 9 is a block diagram showing the structure of the gas supply nozzleof the processing furnace constituting a part of the substrateprocessing apparatus according to a seventh embodiment, (a) shows a flatsectional view of the processing furnace, and (b) is a schematic viewshowing the arrangement of the gas supply nozzle in the processingfurnace.

FIG. 10 is a block diagram showing the structure of the gas supplynozzle of the processing furnace constituting a part of the substrateprocessing apparatus according to an eighth embodiment, (a) shows a flatsectional view of the processing furnace, and (b) is a schematic viewshowing the arrangement of the gas supply nozzle in the processingfurnace.

FIG. 11 is a block diagram showing the structure of the gas supplynozzle of the processing furnace constituting a part of the substrateprocessing apparatus according to a ninth embodiment of the presentinvention.

FIG. 12 is a graph showing a thickness distribution between wafers of athin film formed by a method of not supplying a processing gas to amiddle part, (a) shows a film thickness distribution when a temperaturegradient is provided in a plurality of wafers, and (b) shows a filmthickness distribution when the temperature gradient is not provided.

FIG. 13 is a graph showing the film thickness distribution betweenwafers of the thin film formed by a method of supplying the processinggas to the middle part, (a) shows a film thickness distribution when aDCS gas and an NH₃ gas are supplied to the middle part, and only the DCSgas is supplied to the middle part, and (b) shows the film thicknessdistribution when a supply part of the DCS gas is further increased.

FIG. 14 is a graph showing a distribution between wafers of a refractiveindex of the thin film when the thin film is formed by the method of notsupplying the processing gas to the middle part, and a distributionbetween wafers of the refractive index of the thin film when the thinfilm is not formed by the method of supplying the processing gas to themiddle part.

FIG. 15 is a schematic view showing a state that gases supplied from thenozzles of approximately the same heights are reacted with each other,to form an amorphous material, and the thin film is formed on the wafer.

FIG. 16 is a block diagram showing the structure of the gas supplynozzle of the processing furnace constituting a part of the substrateprocessing apparatus according to a thirteenth embodiment of the presentinvention.

DESCRIPTION OF SIGNS AND NUMERALS

-   41 to 44 Nozzles (second gas supply part)-   45 Nozzle (first gas supply part)-   46 to 49 Nozzles (forth gas supply parts)-   50 Nozzle (third gas supply part)-   178 to 182 Mass flow controller (gas flow controller)-   171 to 175 Mass flow controller (gas flow controller)-   200 Wafer (substrate)-   201 Processing chamber-   202 Processing furnace (constituting a part of a substrate    processing apparatus)-   217 Boat (holding tool)-   231 Exhaust system (exhaust part)-   232 Gas supply system-   R₁ Product wafer/monitor wafer arrangement region (region where    substrates are arranged)

1. A substrate processing apparatus, comprising: a processing chamberthat forms a thin film on a main surface of a plurality of substrates; aheater provided outside of the processing chamber, for heating an insideof the processing chamber; a first gas supply part configured to supplya first processing gas containing at least one element of a plurality ofelements constituting the thin film formed on the main surface of thesubstrate and capable of depositing a film by itself to a gas flowoutside of a region where the plurality of substrates loaded into theprocessing chamber are arranged, which is a region not opposed to theheater in the processing chamber; a second gas supply part providedindependently of the first gas supply part, configured to supply thefirst processing gas to a middle part of a gas flow in a region wherethe plurality of substrates loaded into the processing chamber arearranged, which is a region opposed to the heater in the processingchamber; a third gas supply part configured to supply a secondprocessing gas containing at least other one element of the plurality ofelements and not capable of depositing the film by itself, to an upperstream side of the gas flow outside of the region where the plurality ofsubstrates loaded into the processing chamber are arranged, which is theregion not opposed to the heater in the processing chamber; an exhaustpart provided on a lower stream side of the gas flow outside of theregion where the plurality of substrates loaded into the processingchamber are arranged, which is the region not opposed to the heater inthe processing chamber; and a controller that controls so as to causethe first processing gas and the second processing gas to react witheach other in the processing chamber to form an amorphous material, andform a thin film of the plurality of substrates.
 2. The substrateprocessing apparatus according to claim 1, wherein the second gas supplypart has a plurality of first gas supply nozzles with mutually differentlengths, and the first gas supply nozzles are respectively extended froman upper stream side of the gas flow outside of the region where theplurality of substrates loaded into the processing chamber are arranged,up to a plurality of middle parts of mutually different positions,provided along the gas flow in a region where the plurality of substrateloaded into the processing chamber are arranged.
 3. The substrateprocessing apparatus according to claim 1, further having a fourth gassupply part configured to supply the second processing gas to the middlepart of the gas flow in a region where the plurality of substratesloaded into the processing chamber are arranged, which is the regionopposed to the heater in the processing chamber.
 4. The substrateprocessing apparatus according to claim 2, further including the fourthgas supply part configured to supply the second processing gas to themiddle part of the gas flow in a region where the plurality ofsubstrates loaded into the processing chamber are arranged, which is theregion opposed to the heater in the processing chamber, wherein thefourth gas supply part has a plurality of gas supply nozzles withmutually different lengths, and the second gas supply nozzles arerespectively extended to a plurality of middle parts provided along thegas flow at mutually different positions in a region where the pluralityof substrates are loaded into the processing chamber, from an upperstream side of the gas flow outside of the region where the plurality ofsubstrates loaded into the processing chamber are arranged.
 5. Thesubstrate processing apparatus according to claim 1, further having atemperature controller that controls the heater, so that a main surfacetemperature of the plurality of substrates loaded into the processingchamber is increased up to a temperature at which at least both of thefirst processing gas and the second processing gas are thermallydecomposed, and the main surface temperature between the plurality ofsubstrates is maintained to be substantially equal to each other over anoverall region where the plurality of substrates are arranged.
 6. Thesubstrate processing apparatus according to claim 4, wherein the firstgas supply nozzle and the second gas supply nozzle are arranged, so thatthe nozzles of substantially same lengths are adjacent to each other. 7.A substrate processing apparatus, comprising: a processing chamber thatforms a thin film on a main surface of a plurality of substrates; a gassupply part configured to supply a first processing gas containing atleast one element of a plurality of elements constituting the thin filmformed on the main surface of the substrate and capable of depositing afilm by itself, to an upper stream side of a gas flow outside of aregion where the plurality of substrates loaded into the processingchamber are arranged, also to supply the first processing gas to amiddle part of the gas flow within the region where the plurality ofsubstrates loaded into the processing chamber are arranged, by amulti-system nozzle; another gas supply part configured to supply asecond processing gas containing at least other one element of theplurality of elements and not capable of depositing the film by itself,to the upper stream side of the gas flow outside of the region where theplurality of substrates loaded into the processing chamber are arranged,by a nozzle provided on the upper stream side of the gas flow, which isa different nozzle from the multi-system nozzle; and a controller thatcontrols so as to cause the first processing gas and the secondprocessing gas to react with each other in the processing chamber toform an amorphous material, and form a thin film of the plurality ofsubstrates.
 8. The substrate processing apparatus according to claim 7,wherein the gas supply part supplies the first processing gas to aplurality of middle parts provided along the gas flow at mutuallydifferent positions, in a region where the plurality of substratesloaded into the processing chamber are arranged.
 9. The substrateprocessing apparatus according to claim 7, wherein the other gas supplypart further supplies the second processing gas to the middle part ofthe gas flow in the region where the plurality of substrates loaded intothe processing chamber are arranged.
 10. The substrate processingapparatus according to claim 7, wherein the first processing gas is agas containing a silicon element, and the second processing gas is a gascontaining a nitrogen element or an oxygen element, and the thin film isa thin film formed of an amorphous material containing the siliconelement and the nitrogen element or the thin film formed of theamorphous material containing the silicon element and the oxygenelement.
 11. The substrate processing apparatus according to claim 7,wherein the first processing gas is a gas containing a chlorine element,and the second processing gas is a gas containing a nitrogen element oran oxygen element.
 12. The substrate processing apparatus according toclaim 7, wherein the first processing gas is a gas of anyone of TCS,HCD, and BTBAS, and the second processing gas is an NH3 gas.
 13. Thesubstrate processing apparatus according to claim 7, wherein themulti-system nozzle of the gas supply part is a plurality of nozzleswith mutually different lengths.
 14. The substrate processing apparatusaccording to claim 9, wherein the other gas supply part supplies thesecond processing gas by a plurality of nozzles with mutually differentlengths.